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SIC10A065T-AU_T0_000A1

Name: Panjit SIC10A065T-AU_T0_000A1
Brand: Panjit
SKU: 241-SIC10A065TAUT000
Price: 94115 IDR
Availability: Discontinued

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Mouser No:

241-SIC10A065TAUT000

Mfr. No:

SIC10A065T-AU_T0_000A1

Mfr.:

Panjit

Description:

SiC Schottky Diodes PJ/10A065T/TP//HF/0.05K/TO-220AC/SIC/TO/SIC-100WH/SIC100W-QI01/PJ//TO220AC-AS06/TO220AC-AS01

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

SIC10A065T-AU_T0_000A1 Datasheet

ECAD Model:

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More Information

Learn more about Panjit SIC10A065T-AU_T0_000A1

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 22 Weeks Estimated factory production time.

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Minimum: 2000 Multiples: 50

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp94.115	Rp188.230.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Panjit
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-220AC-2
Configuration:	Single
If - Forward Current:	10 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.5 V
Ifsm - Forward Surge Current:	400 A
Ir - Reverse Current:	20 uA
Maximum Operating Temperature:	+ 175 C
Qualification:	AEC-Q101
Packaging:	Tube
Brand:	Panjit
Pd - Power Dissipation:	115 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	50
Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	650 V
Unit Weight:	1,890 g

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Datasheet

SIC10A065T-AU_T0_000A1 Datasheet

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Compliance Codes

CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
KRHTS:: 8541109000
TARIC:: 8541100000
MXHTS:: 8541100199
BRHTS:: 85411099
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

SiC Schottky Barrier Diodes

PANJIT Silicon-Carbide (SiC) Schottky Barrier Diodes with low forward-voltage and zero reverse recovery current ensure cooler system temperature under harsh operating conditions of power conversion systems. These SiC diodes feature low conduction and switching loss, high surge current capability, temperature-independent switching behavior, and positive temperature co-efficient on V_F. The SiC diodes are available at a range of 2A to 20A forward current (I_F) and 650V to 1200V Maximum Repetitive Peak Reverse Voltage (V_RRM) ratings. These hard switching and highly reliable diodes operate at high-frequency and offer high system efficiency. The SiC Schottky diodes are ideal for high-temperature applications.