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QPA2211D

Name: Qorvo QPA2211D
Brand: Qorvo
SKU: 772-QPA2211D
Price: 9550928 IDR
Availability: OutOfStock

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Mouser No:

772-QPA2211D

Mfr. No:

QPA2211D

Mfr.:

Qorvo

Description:

RF Amplifier GaN Amplifier

Datasheet:

QPA2211D Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Qorvo QPA2211D

Shipping Alert:

This product may require additional documentation to export from the United States.

Availability

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Factory Lead Time:: 20 Weeks Estimated factory production time.

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Ext. Price:

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp9.550.928	Rp95.509.280

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	RF Amplifier
Delivery Restrictions:	This product may require additional documentation to export from the United States.
RoHS:
Operating Frequency:	27.5 GHz to 31 GHz
Operating Supply Voltage:	22 V
Operating Supply Current:	280 mA
Gain:	26 dB
Type:	Power Amplifiers
Mounting Style:	SMD/SMT
Package/Case:	Die
Technology:	GaN SiC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Series:	QPA2211D
Packaging:	Gel Pack
Brand:	Qorvo
Development Kit:	QPA2211DEVB03
Input Return Loss:	12 dB
Number of Channels:	1 Channel
Pd - Power Dissipation:	40 W
Product Type:	RF Amplifier
Factory Pack Quantity:	10
Subcategory:	Wireless & RF Integrated Circuits
Test Frequency:	31 GHz
Unit Weight:	2,140 g

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Datasheet

QPA2211D Datasheet (PDF)

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USHTS:: 8542330001
TARIC:: 8542330000
ECCN:: 3A001.b.2.c

QPA2210D & QPA2211D 27-31GHz GaN Power Amplifiers

Qorvo QPA2210D and QPA2211D GaN Ka-Band Power Amplifiers operate between a 27GHz and 31GHz frequency range to support satellite communications and 5G infrastructure. The amplifiers are fabricated on Qorvo's 0.15µm gallium nitride (GaN) on silicon carbide (SiC) process. The amplifiers are also fully matched to 50Ω with integrated DC blocking caps on both I/O ports. The amplifiers are 100% DC and RF tested on-wafer to ensure compliance with electrical specifications.