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Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Configuration
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Drain-Source Current at Vgs=0
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
onsemi JFETs UJ4N075004L8S
Datasheet
2.021In Stock
Min.: 1
Mult.: 1
: 2.000

SiC SMD/SMT MO-229-8 N-Channel Single 750 V - 30 V to 30 V 13 uA 120 A 4.3 mOhms 1.153 kW - 55 C + 175 C UJ4N Reel, Cut Tape
onsemi JFETs UJ4N075005K4S
Datasheet
342In Stock
Min.: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel Single 750 V - 30 V to 30 V 13 uA 120 A 4.8 mOhms 714 W - 55 C + 175 C UJ4N Tube