CGH09120F

Name: MACOM CGH09120F
Brand: MACOM
SKU: 941-CGH09120F
Price: 11749512 IDR
Availability: InStock

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Mouser No:

941-CGH09120F

Mfr. No:

CGH09120F

Mfr.:

MACOM

Description:

GaN FETs GaN HEMT UHF-2.5GHz, 120 Watt

Datasheet:

CGH09120F Datasheet (PDF)

ECAD Model:

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More Information

Learn more about MACOM CGH09120F

In Stock: 7

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp11.749.512	Rp11.749.512
	Rp10.460.889	Rp104.608.890

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
RoHS:
Mounting Style:	Screw Mount
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	120 V
Id - Continuous Drain Current:	28 A
Vgs th - Gate-Source Threshold Voltage:	- 3 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	56 W
Brand:	MACOM
Configuration:	Single
Gain:	21 dB
Maximum Drain Gate Voltage:	28 V
Maximum Operating Frequency:	2.5 GHz
Minimum Operating Frequency:	300 MHz
Output Power:	20 W
Packaging:	Tray
Product Type:	GaN FETs
Factory Pack Quantity:	40
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	GaN HEMT
Vgs - Gate-Source Breakdown Voltage:	- 10 V, 2 V

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Datasheet

CGH09120F Datasheet (PDF)

PCN

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

CGH09120F GaN High Electron Mobility Transistor

MACOM CGH09120F GaN High Electron Mobility Transistor (HEMT) is designed for high efficiency, high gain, and wide bandwidth capabilities. This module allows for a high degree of DPD correction to be applied, making it ideal for MC-GSM, WCDMA, and LTE amplifier applications. This MACOM transistor is housed in a ceramic/metal flange package.