SIHP080N60E-GE3

Vishay / Siliconix
78-SIHP080N60E-GE3
SIHP080N60E-GE3

Mfr.:

Description:
MOSFETs TO220 600V 35A N-CH MOSFET

Datasheet:
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Learn more about Vishay / Siliconix SIHP080N60E-GE3

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
Through Hole
TO-220-3
N-Channel
1 Channel
600 V
35 A
80 mOhms
30 V
5 V
42 nC
- 55 C
+ 150 C
227 W
Enhancement
Tube
Brand: Vishay / Siliconix
Configuration: Single
Fall Time: 31 ns
Forward Transconductance - Min: 4.6 S
Product Type: MOSFETs
Rise Time: 96 ns
Series: SIHP E
Factory Pack Quantity: 1000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 37 ns
Typical Turn-On Delay Time: 31 ns
Unit Weight: 2 g
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Datasheet

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Compliance Codes
CNHTS:
8541290000
TARIC:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

SiHP080N60E E Series Power MOSFETs

Vishay / Siliconix SiHP080N60E E Series Power MOSFETs offer 4th generation E series technology in a TO-220AB package. The SiHP080N60E features a low figure-of-merit (FOM) Ron x Qg and a low effective capacitance (Co(er)). The Vishay / Siliconix SiHP080N60E E Series Power MOSFETs are designed for Server and telecom, SMPS, and PFC power supply applications.

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
960
Expected 22/03/2027
Factory Lead Time:
28
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp103.838 Rp103.838
Rp54.304 Rp543.040
Rp49.534 Rp4.953.400
Rp46.966 Rp23.483.000
Rp41.462 Rp41.462.000

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