CMPA2735030S

MACOM
941-CMPA2735030S
CMPA2735030S

Mfr.:

Description:
RF Amplifier MMIC, GaN HEMT, G50V3-1C, 30W, 2.7-3.5GH

ECAD Model:
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In Stock: 40

Stock:
40 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp5.552.417 Rp5.552.417
Rp4.973.417 Rp49.734.170
Full Reel (Order in multiples of 25)
Rp4.871.046 Rp121.776.150
100 Quote

Product Attribute Attribute Value Select Attribute
MACOM
Product Category: RF Amplifier
RoHS:  
2.7 GHz to 3.5 GHz
28.1 dB
SMD/SMT
QFN-32
GaN
+ 225 C
Reel
Cut Tape
Brand: MACOM
Moisture Sensitive: Yes
Pd - Power Dissipation: 32 W
Product Type: RF Amplifier
Factory Pack Quantity: 25
Subcategory: Wireless & RF Integrated Circuits
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USHTS:
8542330001
TARIC:
8542330000
ECCN:
EAR99

CMPA2735030S 30W GaN MMIC Power Amplifier

Wolfspeed / Cree CMPA2735030S 30W 2.7GHz to 3.5GHz GaN MMIC Power Amplifier is a high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC). The CMPA2735030S gallium nitride (GaN) amp offers excellent benefits compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. Additionally, the GaN HEMTs provide greater power density and wider bandwidths compared to Si and GaAs transistors.