NVMTS1D1N08XTXG

Name: onsemi NVMTS1D1N08XTXG
Brand: onsemi
SKU: 863-NVMTS1D1N08XTXG
Price: 103288 IDR
Availability: OutOfStock

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Mouser No:

863-NVMTS1D1N08XTXG

Mfr. No:

NVMTS1D1N08XTXG

Mfr.:

onsemi

Description:

MOSFETs T10 80V SG PQFN 88

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NVMTS1D1N08XTXG Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TDFNW-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	352 A
Rds On - Drain-Source Resistance:	1 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	3.6 V
Qg - Gate Charge:	121 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	250 W
Channel Mode:	Enhancement
Tradename:	PowerTrench
Brand:	onsemi
Configuration:	Single
Fall Time:	13 ns
Forward Transconductance - Min:	154 S
Product Type:	MOSFETs
Rise Time:	24 ns
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	65 ns
Typical Turn-On Delay Time:	35 ns

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Datasheet

NVMTS1D1N08XTXG Datasheet (PDF)

Origin Classifications

Country of Origin:: Not available
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

NVMTS1D1N08X N‐Channel Power MOSFETs

onsemi NVMTS1D1N08X N-Channel Power MOSFETs provide high-current switching for automotive power conversion and motor control applications. The MOSFETs combine low on-resistance with low gate charge and capacitance to minimize conduction and driver losses. A low-reverse-recovery-charge body diode with soft recovery supports efficient switching in demanding power systems.

FEATURED PRODUCTS

ONSEMI

NVMTS1D1N08X N‐Channel Power MOSFETs

80V automotive MOSFETs with low on-resistance and soft-recovery body diode.

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Offer low R_DS(on) to minimize conduction losses & low QG and capacitance to minimize driver losses.

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NVNJWS1K6N061L N-Channel MOSFET

Features low R_DS(on) and low gate threshold with integrated ESD protection.

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NVBYST0D8N08X Single N-Channel Power MOSFET

Optimized for high‑voltage operation and withstands fast switching and high-current stresses.

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NTMFD0D9N02P1E MOSFET

Dual N-channel MOSFET designed with low R_g for fast switching applications.

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Availability

Stock:: 0

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On Order:: 3.000

Expected 26/02/2027
Factory Lead Time:: 53

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp103.288	Rp103.288
	Rp67.697	Rp676.970
	Rp50.452	Rp5.045.200
	Rp42.196	Rp21.098.000

NVMTS1D1N08XTXG

Mfr.: onsemi

Description: MOSFETs T10 80V SG PQFN 88

Specifications

Documents (1)

Datasheet

Product & Trade Compliance

More Information

NVMTS1D1N08X N‐Channel Power MOSFETs

FEATURED PRODUCTS ONSEMI

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Mfr.:

onsemi

Description:

MOSFETs T10 80V SG PQFN 88

FEATURED PRODUCTS

ONSEMI