|
|
SiC MOSFETs CoolSiC MOSFET discrete 1200V, 22 mohm G2
- IMZC120R022M2HXKSA1
- Infineon Technologies
-
1:
Rp316.285
-
1.615In Stock
-
New Product
|
Mouser Part No
726-IMZC120R022M2HXK
New Product
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET discrete 1200V, 22 mohm G2
|
|
1.615In Stock
|
|
Min.: 1
Mult.: 1
Max.: 50
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
80 A
|
22 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
329 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFETs CoolSiC MOSFET discrete 1200V, 12 mohm G2
- IMZC120R012M2HXKSA1
- Infineon Technologies
-
1:
Rp488.554
-
690In Stock
-
240Expected 15/10/2026
-
New Product
|
Mouser Part No
726-IMZC120R012M2HXK
New Product
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET discrete 1200V, 12 mohm G2
|
|
690In Stock
240Expected 15/10/2026
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
129 A
|
12 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFETs CoolSiC MOSFET discrete 1200V, 17 mohm G2
- IMZC120R017M2HXKSA1
- Infineon Technologies
-
1:
Rp405.997
-
144In Stock
-
480Expected 27/07/2026
-
New Product
|
Mouser Part No
726-IMZC120R017M2HXK
New Product
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET discrete 1200V, 17 mohm G2
|
|
144In Stock
480Expected 27/07/2026
|
|
Min.: 1
Mult.: 1
Max.: 20
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
97 A
|
17 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
382 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFETs CoolSiC MOSFET discrete 1200V, 26 mohm G2
- IMZC120R026M2HXKSA1
- Infineon Technologies
-
1:
Rp313.350
-
483In Stock
-
New Product
|
Mouser Part No
726-IMZC120R026M2HXK
New Product
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET discrete 1200V, 26 mohm G2
|
|
483In Stock
|
|
Min.: 1
Mult.: 1
Max.: 20
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
69 A
|
25 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
289 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFETs CoolSiC MOSFET discrete 1200V, 34 mohm G2
- IMZC120R034M2HXKSA1
- Infineon Technologies
-
1:
Rp230.059
-
1.031In Stock
-
New Product
|
Mouser Part No
726-IMZC120R034M2HXK
New Product
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET discrete 1200V, 34 mohm G2
|
|
1.031In Stock
|
|
Min.: 1
Mult.: 1
Max.: 70
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
|
- 10 V, + 25 V
|
5.1 V
|
45 nC
|
- 55 C
|
+ 175 C
|
244 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFETs CoolSiC MOSFET discrete 1200V, 53 mohm G2
- IMZC120R053M2HXKSA1
- Infineon Technologies
-
1:
Rp186.395
-
754In Stock
-
New Product
|
Mouser Part No
726-IMZC120R053M2HXK
New Product
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET discrete 1200V, 53 mohm G2
|
|
754In Stock
|
|
|
Rp186.395
|
|
|
Rp109.893
|
|
|
Rp93.014
|
|
|
Rp92.831
|
|
|
Rp91.363
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
38 A
|
53 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
182 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFETs CoolSiC MOSFET discrete 1200V, 40 mohm G2
- IMZC120R040M2HXKSA1
- Infineon Technologies
-
1:
Rp219.051
-
1.992On Order
-
New Product
|
Mouser Part No
726-IMZC120R040M2HXK
New Product
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET discrete 1200V, 40 mohm G2
|
|
1.992On Order
On Order:
312 Expected 29/10/2026
480 Expected 22/04/2027
480 Expected 13/05/2027
240 Expected 20/05/2027
240 Expected 03/06/2027
240 Expected 10/06/2027
Factory Lead Time:
45 Weeks
|
|
|
Rp219.051
|
|
|
Rp130.807
|
|
|
Rp112.828
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
48 A
|
40 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
39 nC
|
- 55 C
|
+ 175 C
|
218 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFETs CoolSiC MOSFET discrete 1200V, 78 mohm G2
- IMZC120R078M2HXKSA1
- Infineon Technologies
-
1:
Rp165.481
-
480Expected 06/08/2026
-
New Product
|
Mouser Part No
726-IMZC120R078M2HXK
New Product
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET discrete 1200V, 78 mohm G2
|
|
480Expected 06/08/2026
|
|
|
Rp165.481
|
|
|
Rp96.683
|
|
|
Rp81.456
|
|
|
Rp80.722
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
28 A
|
78 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
21 nC
|
- 55 C
|
+ 175 C
|
143 W
|
Enhancement
|
CoolSiC
|
|