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VSMA1085750X02

Name: Vishay VSMA1085750X02
Brand: Vishay Semiconductors
SKU: 78-VSMA1085750X02
Price: 55772 IDR
Availability: InStock

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Mouser No:

78-VSMA1085750X02

Mfr. No:

VSMA1085750X02

Mfr.:

Vishay Semiconductors

Description:

Infrared Emitters HIPOW IR EMITTING DIODE 940NM -E3

Datasheet:

VSMA1085750X02 Datasheet

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In Stock: 677

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp55.772	Rp55.772
	Rp40.545	Rp405.450
	Rp31.555	Rp3.155.500
Full Reel (Order in multiples of 600)
	Rp26.969	Rp16.181.400
	Rp24.400	Rp29.280.000
	Rp23.299	Rp55.917.600
	Rp22.933	Rp110.078.400

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	Infrared Emitters
RoHS:
Mounting Style:	SMD/SMT
Wavelength:	850 nm
Radiant Intensity:	1600 mW/sr
If - Forward Current:	1 A, 1.5 A
Vf - Forward Voltage:	3.9 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Package/Case:	3.4 mm x 3.4 mm
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Vishay Semiconductors
Fall Time:	16 ns
Moisture Sensitive:	Yes
Product Type:	IR Emitters (IR LEDs)
Rise Time:	13 ns
Series:	VSM
Factory Pack Quantity:	600
Subcategory:	Infrared Data Communications

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Datasheet

VSMA1085750X02 Datasheet

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CAHTS:: 8541410000
USHTS:: 8541410000
JPHTS:: 854141000
TARIC:: 8541410000
MXHTS:: 8541410100
ECCN:: EAR99

VSMA1085750X02 High Power Infrared Emitting Diode

Vishay VSMA1085750X02 High Power Infrared Emitting Diode is part of the Astral portfolio. Vishay VSMA1085750X02 is an 850nm infrared emitting diode with a double stack emitter chip for maximum radiant power. The device has a 42-millimeter chip size, allows 1.5A DC operation, and accommodates pulsed currents up to 5.0A.