NXH00xP120M3F2PTxG EliteSiC Half-Bridge Modules

onsemi NXH00xP120M3F2PTxG EliteSiC Half-Bridge Modules are 2-pack modules with two 3MΩ or 4mΩ 1200V SIC MOSFET switches and a thermistor with Zirconia Doped Alumina (HPS) Direct Bonded Copper (DBC) or Silicon Nitride (Si3N4)  DBC. The F2 packaged SIC MOSFET switches utilise M3S technology and feature a 15V to 18V gate drive range. Applications include DC-AC, DC-DC, and AC-DC conversions.

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Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Series
Packaging
onsemi MOSFET Modules 1200V 3M M3S SIC HALFBRIDGE WITH HPS DBC IN F2 MODULES
Datasheet
25In Stock
Min.: 1
Mult.: 1

SiC Press Fit PIM-36 1.2 kV 350 A 5.88 mohms - 10 V, + 22 V 2.4 V - 40 C + 175 C 979 W NXH003P120M3F2PTHG Tray
onsemi MOSFET Modules 1200V 3M M3S SIC HALFBRIDGE WITH SI3N4 DBC IN F2 MODULES
Datasheet
58In Stock
Min.: 1
Mult.: 1

SiC Press Fit PIM-36 1.2 kV 435 A 5.88 mohms - 10 V, + 22 V 2.4 V - 40 C + 175 C 1.482 kW NXH003P120M3F2PTNG Tray
onsemi MOSFET Modules 1200V 4M M3S SIC HALFBRIDGE WITH HPS DBC IN F2 MODULES
Datasheet
26In Stock
Min.: 1
Mult.: 1

SiC Press Fit PIM-36 1.2 kV 284 A 7.5 mohms - 10 V, + 22 V 2.8 V - 40 C + 175 C 785 W NXH004P120M3F2PTHG Tray
onsemi MOSFET Modules 1200V 4M M3S SIC HALFBRIDGE WITH SI3N4 DBC IN F2 MODULES
Datasheet
10In Stock
Min.: 1
Mult.: 1

SiC NXH004P120M3F2PTNG Tray