Trench8 MOSFETs

onsemi Trench8 MOSFETs feature low maximum ON-resistance (RDS(ON), ultra-low gate charge (Qg), and low (Qg) x RDS(ON), a key figure of merit (FOM) for MOSFETs used in power conversion applications. Featuring optimized switching performance based on T6 technology, the Trench8 MOSFETs offer a 35% to 40% reduction in Qg and Qoss from the Trench6 series. The onsemi Trench8 MOSFETs are available in a wide range of package types for design flexibility. AEC-Q101 Qualified and PPAP capable options are available for automotive applications. Many of these devices are offered in flank-wettable packages enabling automated optical inspection (AOI).

Results: 103
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 Mfr.
Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Tradename
Packaging
onsemi MOSFETs T8 60V LOW COSS
Datasheet
Non-Stocked Lead-Time 52 Weeks
Min.: 5.000
Mult.: 5.000
: 5.000
Si SMD/SMT SO-8FL Reel
onsemi MOSFETs TRENCH 8 80V NFET
Datasheet
Non-Stocked Lead-Time 52 Weeks
Min.: 1.500
Mult.: 1.500
: 1.500
Si SMD/SMT SO-8FL-4 N-Channel 1 Channel 80 V 43 A 14.2 mOhms - 20 V, 20 V 2 V 13 nC - 55 C + 175 C 54 W Enhancement AEC-Q101 Reel
onsemi MOSFETs T8 60V LOW COSS
Datasheet
Non-Stocked Lead-Time 52 Weeks
Min.: 1
Mult.: 1
: 1.500

Si SO-8FL-4 Reel, Cut Tape