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SIHS90N65E-GE3

Name: Vishay SIHS90N65E-GE3
Brand: Vishay / Siliconix
SKU: 78-SIHS90N65E-GE3
Price: 372607 IDR
Availability: InStock

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Mouser No:

78-SIHS90N65E-GE3

Mfr. No:

SIHS90N65E-GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs SPR247 650V 87A N-CH MOSFET

Datasheet:

SIHS90N65E-GE3 Datasheet

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In Stock: 62

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp372.607	Rp372.607
	Rp266.751	Rp2.667.510

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	Super-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	87 A
Rds On - Drain-Source Resistance:	29 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	394 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	625 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Vishay / Siliconix
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	267 ns
Forward Transconductance - Min:	32 S
Product Type:	MOSFETs
Rise Time:	152 ns
Series:	SIHS E
Factory Pack Quantity:	480
Subcategory:	Transistors
Transistor Type:	E Series Power MOSFET
Typical Turn-Off Delay Time:	323 ns
Typical Turn-On Delay Time:	85 ns

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Datasheet

SIHS90N65E-GE3 Datasheet

Models

Technical Resources

TO-274AA (High Voltage)

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

SiHS90N65E Power MOSFET

Vishay / Siliconix SiHS90N65E Power MOSFET offers a low figure-of-merit, low input capacitance, and ultra-low gate charge. The SiHS90N65E Power MOSFET has a 700V drain-source voltage and is optimized to reduce switching and conduction losses. The Vishay / Siliconix SiHS90N65E Power MOSFET is suitable for server and telecom power supplies, lighting, and industrial applications.