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NVH4L095N065SC1

Name: onsemi NVH4L095N065SC1
Brand: onsemi
SKU: 863-NVH4L095N065SC1
Price: 232811 IDR
Availability: InStock

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Mouser No:

863-NVH4L095N065SC1

Mfr. No:

NVH4L095N065SC1

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS TO247-4L 650V

Datasheet:

NVH4L095N065SC1 Datasheet

ECAD Model:

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Learn more about onsemi NVH4L095N065SC1

In Stock: 440

Stock:: 440 Can Dispatch Immediately

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Factory Lead Time:: 9 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp232.811	Rp232.811
	Rp139.797	Rp1.397.970
	Rp132.642	Rp15.917.040

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	31 A
Rds On - Drain-Source Resistance:	105 mOhms
Vgs - Gate-Source Voltage:	- 5 V, + 18 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	50 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	64 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Fall Time:	9 ns
Forward Transconductance - Min:	6.9 S
Packaging:	Tube
Product:	Mosfets
Product Type:	SiC MOSFETS
Rise Time:	12 ns
Series:	NVH4L095N065SC1
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	20 ns
Typical Turn-On Delay Time:	8 ns

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Datasheet

NVH4L095N065SC1 Datasheet

Material Composition Disclosure

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low R_DS(on), and high short circuit withstand time (SCWT).

NVH4L095N065SC1 Silicon Carbide (SiC) MOSFETs

onsemi NVH4L095N065SC1 Silicon Carbide (SiC) MOSFETs feature advanced technology for better-switching performance and reliability. The onsemi NVH4L095N065SC1 has low ON resistance and compact chip size, resulting in reduced capacitance and gate charge. The device also has high efficiency, fast operation, increased power density, less EMI, and a smaller system size.