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FFSP0865B

Name: onsemi FFSP0865B
Brand: onsemi
SKU: 863-FFSP0865B
Price: 55221 IDR
Availability: InStock

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Mouser No:

863-FFSP0865B

Mfr. No:

FFSP0865B

Mfr.:

onsemi

Description:

SiC Schottky Diodes SIC DIODE TO220 650V

Datasheet:

FFSP0865B Datasheet

ECAD Model:

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More Information

Learn more about onsemi FFSP0865B

In Stock: 1.334

Stock:: 1.334 Can Dispatch Immediately

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Factory Lead Time:: 13 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp55.221	Rp55.221
	Rp30.821	Rp308.210
	Rp28.069	Rp2.806.900
	Rp26.235	Rp13.117.500
	Rp25.134	Rp25.134.000
	Rp24.033	Rp60.082.500

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-220-2
Configuration:	Single
If - Forward Current:	8 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.39 V
Ifsm - Forward Surge Current:	56 A
Ir - Reverse Current:	40 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	FFSP0865B
Packaging:	Tube
Brand:	onsemi
Pd - Power Dissipation:	73 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	50
Subcategory:	Diodes & Rectifiers
Tradename:	EliteSiC
Vr - Reverse Voltage:	650 V

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Datasheet

FFSP0865B Datasheet

PCN

Material Composition Disclosure

CNHTS:: 8541100000
USHTS:: 8541100080
ECCN:: EAR99

FFSP0865B 650V 8A SiC Schottky Diodes

onsemi FFSP0865B 650V, 8A Silicon Carbide Schottky Diodes use a technology that provides superior switching performance and higher reliability. onsemi FFSP0865B SiC Diodes feature temperature-independent switching characteristics, no reverse recovery current, and excellent thermal performance. Additional benefits include the highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. The FFSP0865B 650V and 8A SiC Schottky Diodes come in a TO-220-2LD package.

650V EliteSiC (Silicon Carbide) Schottky Diodes

onsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.

D2 EliteSiC Diodes

onsemi D2 EliteSiC Diodes are a range of high-performance diodes designed for applications requiring a voltage rating of 650V. The onsemi D2 is available in various packages, including DPAK-3, D2PAK-2, D2PAK-3, PQFN-4, TO-220-2, TO-220-3, TO-247-2, and TO-247-3. These diodes offer low capacitive charge (QC) and are optimized for high-speed switching with low forward voltage. These features make the diodes ideal for power factor correction (PFC) and output rectification applications.