FFSP0865B

onsemi
863-FFSP0865B
FFSP0865B

Mfr.:

Description:
SiC Schottky Diodes SIC DIODE TO220 650V

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about onsemi FFSP0865B

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
TO-220-2
Single
8 A
650 V
1.39 V
56 A
40 uA
- 55 C
+ 175 C
650 V
FFSP0865B
Tube
Brand: onsemi
Pd - Power Dissipation: 73 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 50
Subcategory: Diodes & Rectifiers
Tradename: EliteSiC
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

PCN

Compliance Codes
CNHTS:
8541100000
USHTS:
8541100080
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
China
Country of Diffusion:
Korea, Republic of
The country is subject to change at the time of shipment.

FFSP0865B 650V 8A SiC Schottky Diodes

onsemi FFSP0865B 650V, 8A Silicon Carbide Schottky Diodes use a technology that provides superior switching performance and higher reliability. onsemi FFSP0865B SiC Diodes feature temperature-independent switching characteristics, no reverse recovery current, and excellent thermal performance. Additional benefits include the highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. The FFSP0865B 650V and 8A SiC Schottky Diodes come in a TO-220-2LD package.

D2 EliteSiC Diodes

onsemi D2 EliteSiC Diodes are a range of high-performance diodes designed for applications requiring a voltage rating of 650V. The onsemi D2 is available in various packages, including DPAK-3, D2PAK-2, D2PAK-3, PQFN-4, TO-220-2, TO-220-3, TO-247-2, and TO-247-3. These diodes offer low capacitive charge (QC) and are optimized for high-speed switching with low forward voltage. These features make the diodes ideal for power factor correction (PFC) and output rectification applications.

650V EliteSiC (Silicon Carbide) Schottky Diodes

onsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.

In Stock: 934

Stock:
934 Can Dispatch Immediately
Factory Lead Time:
52 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1   Maximum: 800
Unit Price:
Rp-,--
Ext. Price:
Rp-,--
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp77.787,04 Rp77.787,04
Rp39.627,36 Rp396.273,60
Rp33.756,64 Rp3.375.664,00
Rp28.436,30 Rp14.218.150,00

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please login to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.