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QPA2575TR7

Name: Qorvo QPA2575TR7
Brand: Qorvo
SKU: 772-QPA2575TR7
Price: 5404365 IDR
Availability: OutOfStock

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See Product Specifications

Mouser No:

772-QPA2575TR7

Mfr. No:

QPA2575TR7

Mfr.:

Qorvo

Description:

RF Amplifier 32-38 GHz 3 W PA

Datasheet:

QPA2575TR7 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Qorvo QPA2575TR7

Shipping Alert:

This product may require additional documentation to export from the United States.

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 15 Weeks Estimated factory production time.

Enter Quantity:

Minimum: 250 Multiples: 250

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 250)
	Rp5.404.365	Rp1.351.091.250

Alternative Packaging

Mfr. Part No.:

QPA2575

Packaging:

Bag

Availability:

In Stock

Price:

Rp7.003.035

Min:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	RF Amplifier
Delivery Restrictions:	This product may require additional documentation to export from the United States.
RoHS:
Series:	QPA2575
Packaging:	Reel
Brand:	Qorvo
Moisture Sensitive:	Yes
Product Type:	RF Amplifier
Factory Pack Quantity:	250
Subcategory:	Wireless & RF Integrated Circuits
Part # Aliases:	QPA2575

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Datasheet

QPA2575TR7 Datasheet (PDF)

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Compliance Codes

USHTS:: 8542330001
TARIC:: 8542330000
ECCN:: 3A001.b.2.d

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

QPA2575 Ka-Band Power Amplifier

Qorvo QPA2575 Ka-Band Power Amplifier operates from 32GHz to 38GHz, providing 3W of saturated power with 16% power-added efficiency and 19dB small-signal gain. To simplify system integration, the QPA2575 is fully matched to 50Ω, with integrated DC blocking caps on both I/O ports. Fabricated on the Qorvo QPHT15 0.15µm power pHEMT (Pseudomorphic High-Electron-Mobility Transistor) process, the QPA2575 is ideally suited to support both commercial and defense-related applications. This device is 100% DC and RF tested on-wafer to ensure compliance with performance specifications.