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GP2T080A120U

Name: SemiQ GP2T080A120U
Brand: SemiQ
SKU: 148-GP2T080A120U
Price: 132275 IDR
Availability: InStock

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Mouser No:

148-GP2T080A120U

Mfr. No:

GP2T080A120U

Mfr.:

SemiQ

Description:

SiC MOSFETs

Datasheet:

GP2T080A120U Datasheet (PDF)

ECAD Model:

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In Stock: 99

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp132.275	Rp132.275
	Rp76.319	Rp763.190
	Rp63.844	Rp7.661.280
	Rp54.671	Rp27.882.210

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Rds On - Drain-Source Resistance:	80 mOhms
Vgs - Gate-Source Voltage:	- 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2.8 V
Qg - Gate Charge:	58 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	188 W
Channel Mode:	Enhancement
Brand:	SemiQ
Configuration:	Single
Fall Time:	10 ns
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	6 ns
Series:	GP2T080A120U
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	16 ns
Typical Turn-On Delay Time:	10 ns

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Datasheet

GP2T080A120U Datasheet (PDF)

PCN

Product Change Notification (PDF)

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

GP2T080A120U 1200V SiC N-Channel MOSFET

SemiQ GP2T080A120U 1200V SiC N-Channel MOSFET offers low capacitance and high system efficiency. This MOSFET features high-speed switching, increased power density, reduced heat-sink size, and a reliable body diode. The GP2T080A120U 1200V SiC N-Channel MOSFET parts are tested to above 1400V and avalanche tested to 200mJ. This MOSFET can be used in the applications such as solar inverters, EV charging stations, induction heating and welding, and motor drivers.