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RJ1N04BBHTL1

Name: ROHM Semiconductor RJ1N04BBHTL1
Brand: ROHM Semiconductor
SKU: 755-RJ1N04BBHTL1
Price: 78154 IDR
Availability: InStock

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Mouser No:

755-RJ1N04BBHTL1

Mfr. No:

RJ1N04BBHTL1

Mfr.:

ROHM Semiconductor

Description:

MOSFETs Nch 80V 100A, TO-263AB, Power MOSFET

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

RJ1N04BBHTL1 Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RJ1N04BBHTL1

In Stock: 772

Stock:: 772 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp78.154	Rp78.154
	Rp51.369	Rp513.690
	Rp38.527	Rp3.852.700
	Rp34.124	Rp17.062.000
Full Reel (Order in multiples of 800)
	Rp30.271	Rp24.216.800

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-263AB-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	5.3 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	46 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	89 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	38 ns
Forward Transconductance - Min:	20 S
Product Type:	MOSFETs
Rise Time:	14 ns
Factory Pack Quantity:	800
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	65 ns
Typical Turn-On Delay Time:	30 ns

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Datasheet

RJ1N04BBHTL1 Datasheet

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

RJ1N04BBH N-Ch Power MOSFET

ROHM Semiconductor RJ1N04BBH N-Ch Power MOSFET offers an 80V drain-source voltage with low on-resistance. The device features a ±100A continuous drain current and 89W power dissipation. The RJ1N04BBH is suitable for many applications, including switching, motor drives, and DC/DC converters. The ROHM RJ1N04BBH MOSFET is available in a high-power TO263AB package.

125°C I2C BUS EEPROMs for 2-Wire Automotive

ROHM Semiconductor 125°C I²C BUS EEPROMs for 2-Wire Automotive are AEC-Q100 qualified. The ROHM I²C BUS EEPROMs feature two ports of Serial Clock (SCL) and Serial Data (SDA) that all controls are available through. The EEPROMs operate from a wide limit of 1.7V to 5.5V, with a possible 1MHz operation.