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DMN3008SFG-7

Name: Diodes Incorporated DMN3008SFG-7
Brand: Diodes Incorporated
SKU: 621-DMN3008SFG-7
Price: 19630 IDR
Availability: InStock

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Mouser No:

621-DMN3008SFG-7

Mfr. No:

DMN3008SFG-7

Mfr.:

Diodes Incorporated

Description:

MOSFETs 30V N-Ch Enh FET 4.6mOhm 10Vgs 17.6A

Datasheet:

DMN3008SFG-7 Datasheet (PDF)

ECAD Model:

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Learn more about Diodes Incorporated DMN3008SFG-7

In Stock: 3.801

Stock:: 3.801 Can Dispatch Immediately

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Factory Lead Time:: 24 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp19.630	Rp19.630
	Rp12.255	Rp122.550
	Rp8.036	Rp803.600
	Rp6.201	Rp3.100.500
	Rp5.614	Rp5.614.000
Full Reel (Order in multiples of 2000)
	Rp4.972	Rp9.944.000
	Rp4.623	Rp18.492.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

DMN3008SFG-13

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

Rp19.630

Min:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerDI3333-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	17.6 A
Rds On - Drain-Source Resistance:	4.6 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.3 V
Qg - Gate Charge:	41 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2.1 W
Channel Mode:	Enhancement
Tradename:	PowerDI
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Diodes Incorporated
Configuration:	Single
Fall Time:	28.4 ns
Product Type:	MOSFETs
Rise Time:	14 ns
Series:	DMN3008
Factory Pack Quantity:	2000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	63.7 ns
Typical Turn-On Delay Time:	5.7 ns
Unit Weight:	30 mg

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Datasheet

DMN3008SFG-7 Datasheet (PDF)

PCN

Environmental Compliance (PDF)

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541219000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

DMN3008 Enhancement Mode MOSFET

Diodes Incorporated DMN3008 30V N-Channel Enhancement Mode MOSFET is designed to minimize the on-state resistance (R_DS(ON)) while maintaining superior switching performance. This device is offered in a small form factor, thermally efficient POWERDI®3333-8 case, and supports higher density end products. Diodes DMN3008 is ideal for high-efficiency power management applications such as backlighting, power management functions, and DC-DC converters.

DMNxx MOSFETs

Diodes Inc. DMNxx MOSFETs are N-channel devices ideally suited for meeting the requirements of a variety of power management applications. DMNxx MOSFETs offer a variety of package options and a wide range of drain-source voltage values.

Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.