AHV85110KNHTR

Allegro MicroSystems
250-AHV85110KNHTR
AHV85110KNHTR

Mfr.:

Description:
Galvanically Isolated Gate Drivers FULLY INTEGRATED HV GATE DRIVER WITH UNIPOLAR OUTPUT

ECAD Model:
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In Stock: 4.883

Stock:
4.883 Can Dispatch Immediately
Factory Lead Time:
24 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1500)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
Rp89.895 Rp89.895
Rp68.431 Rp684.310
Rp63.110 Rp1.577.750
Rp57.240 Rp5.724.000
Rp54.488 Rp13.622.000
Rp52.653 Rp26.326.500
Rp50.635 Rp50.635.000
Full Reel (Order in multiples of 1500)
Rp49.167 Rp73.750.500
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Allegro MicroSystems
Product Category: Galvanically Isolated Gate Drivers
RoHS:  
AHV85110
SMT-12
1 Channel
5 kVrms
- 40 C
+ 125 C
100 ns
9 ns
7 ns
Reel
Cut Tape
MouseReel
Brand: Allegro MicroSystems
Moisture Sensitive: Yes
Number of Outputs: 1 Output
Operating Supply Current: 450 uA
Product: Isolated Gate Drivers
Product Type: Galvanically Isolated Gate Drivers
Factory Pack Quantity: 1500
Supply Voltage - Max: 13.2 V
Supply Voltage - Min: 10.5 V
Technology: GaN
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CNHTS:
8542399000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

AHV85110 Isolated GaNFET Gate Drivers

Allegro MicroSystems AHV85110 Isolated GaNFET Gate Drivers are self-powered single-channel isolated drivers. These gate drivers are designed to drive GaNFETs in multiple applications and topologies. The AHV85110 gate drivers include a 50ns propagation delay and high peak source/sink capability to efficiently drive GaN FETs in high-frequency designs. These drivers combine the isolated gate driver and power supply into a single, compact package, eliminating the need for an external gate drive auxiliary bias supply or high-side bootstrap. The AHV85110 gate drivers include fast propagation delay and high peak source/sink capability to drive GaN FETs efficiently in high-frequency designs.

Clean Energy

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