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TDS2621LP.C

Name: Semtech TDS2621LP.C
Brand: Semtech
SKU: 947-TDS2621LP.C
Price: 22382 IDR
Availability: InStock

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Mouser No:

947-TDS2621LP.C

Mfr. No:

TDS2621LP.C

Mfr.:

Semtech

Description:

ESD Protection Diodes / TVS Diodes TDS, 1-Line 26V 24A TVS EOS SLP1616N2P

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

TDS2621LP.C Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Semtech TDS2621LP.C

In Stock: 2.965

Stock:: 2.965 Can Dispatch Immediately

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Factory Lead Time:: 5 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp22.382	Rp22.382
	Rp14.658	Rp146.580
	Rp12.163	Rp1.216.300
	Rp11.668	Rp5.834.000
	Rp11.264	Rp11.264.000
	Rp11.008	Rp33.024.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Semtech
Product Category:	ESD Protection Diodes / TVS Diodes
RoHS:
Working Voltage:	26.4 V
Termination Style:	SMD/SMT
Clamping Voltage:	35 V
Breakdown Voltage:	31 V
Package/Case:	DFN-2
Ipp - Peak Pulse Current:	24 A
Pppm - Peak Pulse Power Dissipation:	840 W
Cd - Diode Capacitance:	86 pF
Vesd - Voltage ESD Contact:	20 kV
Vesd - Voltage ESD Air Gap:	25 kV
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Brand:	Semtech
Factory Pack Quantity:	3000
Subcategory:	ESD Protection Diodes / TVS Diodes
Tradename:	SurgeSwitch
Vf - Forward Voltage:	600 mV

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Datasheet

TDS2621LP.C Datasheet (PDF)

CAHTS:: 8541100090
USHTS:: 8541100080
TARIC:: 8541100000
ECCN:: EAR99

TDS2621LP Transient Diverting Suppressors (TDS)

Semtech TDS2621LP Transient Diverting Suppressors (TDS) are designed to provide high-energy electrical overstress (EOS) protection with superior clamping and temperature characteristics when compared to standard TVS devices. The Semtech TDS2621LP devices use a surge-rated FET as the main protection element. During an EOS event, transient voltage increases beyond the rated breakdown voltage of the device. The FET then switches on and conducts a transient current to ground. The TDS clamping voltage is nearly constant across the rated peak pulse current range due to the extremely low ON Resistance [R_DS(on)] of the FET. Lower clamping voltage at maximum peak pulse current makes the TDS components more suitable for protecting sensitive integrated circuits (ICs), when compared to standard TVS diodes.