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MRFE6VS25GN-960

Name: NXP MRFE6VS25GN-960
Brand: NXP Semiconductors
SKU: 771-MRFE6VS25GN-960
Price: 26968437 IDR
Availability: InStock

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Mouser No:

771-MRFE6VS25GN-960

Mfr. No:

MRFE6VS25GN-960

Mfr.:

NXP Semiconductors

Description:

RF Development Tools MRFE6VS25GN 960-1215 MHz Reference Circuit

Datasheet:

MRFE6VS25GN-960 Datasheet (PDF)

More Information

Learn more about NXP Semiconductors MRFE6VS25GN-960

In Stock: 2

Stock:: 2 Can Dispatch Immediately

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Factory Lead Time:: 53 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp26.968.437	Rp26.968.437

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	NXP
Product Category:	RF Development Tools
RoHS:
Product:	Reference Design Boards
Type:	RF Transistor
Tool Is For Evaluation Of:	MRFE6VS25N
Frequency:	960 MHz to 1.215 GHz
Brand:	NXP Semiconductors
Operating Supply Voltage:	50 V
Product Type:	RF Development Tools
Series:	MRFE6VS25N
Factory Pack Quantity:	1
Subcategory:	Development Tools
Unit Weight:	453,592 g

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Datasheet

MRFE6VS25GN-960 Datasheet (PDF)

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Compliance Codes

USHTS:: 9030908050
ECCN:: EAR99

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

RF Reference Circuits

NXP Semiconductors RF Reference Circuits are ease of use solutions designed to accelerate prototyping RF applications for faster time to market. These compact reference circuits offer design reuse across frequencies using the same PCB layout, enabling RF designers to quickly generate new power amplifier designs for multiple frequencies.

MRFE6VS25GN Reference Circuit

NXP Semiconductors MRFE6VS25GN Reference Circuit is designed to allow rapid evaluation and prototyping of the MRFE6VS25 RF Power LDMOS Transistor. The MRFE6VS25 is designed for both narrowband and broadband ISM, broadcast, and aerospace applications operating at frequencies from 1.8MHz to 2000MHz. These devices are fabricated using NXP’s enhanced ruggedness platform and are suitable for use in applications with high VSWRs.