It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IRF100B201

Name: Infineon IRF100B201
Brand: Infineon Technologies
SKU: 942-IRF100B201
Price: 52653 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

942-IRF100B201

Mfr. No:

IRF100B201

Mfr.:

Infineon Technologies

Description:

MOSFETs MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg

Datasheet:

IRF100B201 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies IRF100B201

In Stock: 18.627

Stock:: 18.627 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp52.653	Rp52.653
	Rp33.757	Rp337.570
	Rp26.418	Rp2.641.800
	Rp25.684	Rp12.842.000
	Rp25.317	Rp25.317.000
	Rp24.767	Rp123.835.000
25.000	Quote

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	192 A
Rds On - Drain-Source Resistance:	4.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	170 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	441 W
Channel Mode:	Enhancement
Tradename:	StrongIRFET
Packaging:	Tube
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	100 ns
Forward Transconductance - Min:	278 S
Product Type:	MOSFETs
Rise Time:	97 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	110 ns
Typical Turn-On Delay Time:	17 ns
Unit Weight:	2 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IRF100B201 Datasheet (PDF)

Models

Saber Model - IRF100B201 (CAD)

Product Catalogs

SPICE Models

Spice Model - IRF100B201

This functionality requires JavaScript to be enabled.

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: China
Country of Diffusion:: Malaysia

The country is subject to change at the time of shipment.

IRF100x201 HEXFET™ Power MOSFETs

Infineon IRF100x201 HEXFET™ Power MOSFETs are 100V, single N-channel MOSFETs with enhanced body diode dV/dt and dl/dt capability. These MOSFETs provide improved gate, avalanche, and dynamic dV/dt ruggedness, fully characterized capacitance, and avalanche Safe Operating Area (SOA). The IRF100x201 MOSFETs come in TO-220 and D²-Pak packages and are RoHS compliant, lead-free, and halogen-free. Applications include brushed and BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, power supplies, and power switches.