Results: 2
Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Transistor Polarity Technology Id - Continuous Drain Current Vds - Drain-Source Breakdown Voltage Operating Frequency Gain Output Power Minimum Operating Temperature Maximum Operating Temperature Mounting Style Package/Case Packaging
NXP Semiconductors RF MOSFET Transistors RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V Lead-Time 53 Weeks
Min.: 1
Mult.: 1

N-Channel Si 30 A 133 V 1.8 MHz to 250 MHz 20.4 dB 330 W - 40 C + 150 C Through Hole TO-247-3 Tube
NXP Semiconductors RF MOSFET Transistors RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V Lead-Time 53 Weeks
Min.: 1
Mult.: 1

N-Channel Si 30 A 133 V 1.8 MHz to 250 MHz 20.4 dB 330 W - 40 C + 150 C Through Hole TO-247-3 Tube