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FAD7171MX

Name: onsemi FAD7171MX
Brand: onsemi
SKU: 863-FAD7171MX
Price: 30454 IDR
Availability: InStock

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Mouser No:

863-FAD7171MX

Mfr. No:

FAD7171MX

Mfr.:

onsemi

Description:

Gate Drivers 600V, 4A, SOIC-8, High-Side Gate Drive IC

Datasheet:

FAD7171MX Datasheet

ECAD Model:

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More Information

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In Stock: 1.148

Stock:: 1.148 Can Dispatch Immediately

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Factory Lead Time:: 17 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp30.454	Rp30.454
	Rp22.382	Rp223.820
	Rp20.364	Rp509.100
	Rp18.108	Rp1.810.800
	Rp17.025	Rp4.256.250
	Rp16.383	Rp8.191.500
	Rp15.851	Rp15.851.000
Full Reel (Order in multiples of 2500)
	Rp14.695	Rp36.737.500
	Rp14.548	Rp109.110.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	Gate Drivers
RoHS:
Product:	Driver ICs - Various
Type:	High-Side
Mounting Style:	SMD/SMT
Package/Case:	SOIC-8
Number of Drivers:	2 Driver
Number of Outputs:	1 Output
Supply Voltage - Min:	10 V
Supply Voltage - Max:	20 V
Rise Time:	11 ns
Fall Time:	12 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	FAD7171MX
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Input Voltage - Max:	20 V
Input Voltage - Min:	10 V
Maximum Turn-Off Delay Time:	95 ns
Maximum Turn-On Delay Time:	100 ns
Off Time - Max:	95 ns
Operating Supply Current:	105 uA
Output Voltage:	35 mV
Pd - Power Dissipation:	625 mW
Product Type:	Gate Drivers
Propagation Delay - Max:	100 ns
Shutdown:	No Shutdown
Factory Pack Quantity:	2500
Subcategory:	PMIC - Power Management ICs
Technology:	Si

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Datasheet

FAD7171MX Datasheet

PCN

Material Composition Disclosure

USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

FAD7171MX High-Side Automotive Gate Driver IC

onsemi FAD7171MX High-Side Automotive Gate Driver IC is a 600V, 4A monolithic high-side gate drive IC, which can drive high-speed MOSFETs and IGBTs that operate up to +600V. The onsemi FAD7171MX features a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross-conduction. onsemi’s high-voltage process and common-mode noise cancelling techniques provide stable operation of the high-side driver under high-dv/dt noise circumstances. An advanced level-shift circuit offers high-side gate driver operation up to V_S=-13V (typical) for V_BS=15V. The Under Voltage Lock Out (UVLO) circuit prevents malfunction when V_BS is lower than the specified threshold voltage.