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NTMTS0D7N04CTXG

Name: onsemi NTMTS0D7N04CTXG
Brand: onsemi
SKU: 863-NTMTS0D7N04CTXG
Price: 68247 IDR
Availability: InStock

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Mouser No:

863-NTMTS0D7N04CTXG

Mfr. No:

NTMTS0D7N04CTXG

Mfr.:

onsemi

Description:

MOSFETs AFSM T6 40V SG NCH

Datasheet:

NTMTS0D7N04CTXG Datasheet

ECAD Model:

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Learn more about onsemi NTMTS0D7N04CTXG

In Stock: 1.617

Stock:: 1.617 Can Dispatch Immediately

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Factory Lead Time:: 13 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp68.247	Rp68.247
	Rp44.764	Rp447.640
	Rp31.372	Rp3.137.200
	Rp27.702	Rp13.851.000
Full Reel (Order in multiples of 3000)
	Rp25.868	Rp77.604.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFNW-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	420 A
Rds On - Drain-Source Resistance:	670 uOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	140 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	205 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	20.4 ns
Forward Transconductance - Min:	200 S
Product Type:	MOSFETs
Rise Time:	18.1 ns
Series:	NTMTS0D7N04C
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	61 ns
Typical Turn-On Delay Time:	28.9 ns
Unit Weight:	319,280 mg

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Datasheet

NTMTS0D7N04CTXG Datasheet

PCN

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

NTMTS0D7N04C 40V N-Channel Power MOSFET

onsemi NTMTS0D7N04C 40V N-Channel Power MOSFET is produced using onsemi’s advanced Power Trench process that incorporates Shielded Gate technology. This process minimizes on-state resistance while maintaining superior switching performance with a leading soft body diode. The onsemi NTMTS0D7N04C offers 420A continuous drain current (I_D) and a low drain-to-source on-resistance (R_DS(on) of 0.67mΩ (max.).