SLG59M1730C

Renesas / Dialog
402-SLG59M1730C
SLG59M1730C

Mfr.:

Description:
Power Switch ICs - Power Distribution A 33 mOHMS, 1 A pFET IPS w Inrush Current

ECAD Model:
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In Stock: 4.585

Stock:
4.585 Can Dispatch Immediately
Factory Lead Time:
8 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp24.217 Rp24.217
Rp8.714 Rp87.140
Rp7.430 Rp743.000
Rp6.770 Rp1.692.500
Rp6.733 Rp6.733.000
Full Reel (Order in multiples of 3000)
Rp5.779 Rp17.337.000
Rp5.412 Rp48.708.000

Product Attribute Attribute Value Select Attribute
Renesas Electronics
Product Category: Power Switch ICs - Power Distribution
RoHS:  
Load Switch
1 Output
1 A
41 mOhms
12 ms
2.5 V to 5.5 V
- 40 C
+ 85 C
SMD/SMT
WLCSP-4
SLG59M1730C
Reel
Cut Tape
Brand: Renesas / Dialog
Pd - Power Dissipation: 500 mW
Product: Load Switches
Product Type: Power Switch ICs - Power Distribution
Factory Pack Quantity: 3000
Subcategory: Switch ICs
Supply Voltage - Max: 5.5 V
Supply Voltage - Min: 2.5 V
Tradename: GreenFET
Unit Weight: 65,133 mg
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CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
TARIC:
8542399000
MXHTS:
8542399901
ECCN:
EAR99

SLG59M1730C Power Switch IC

Renesas / Dialog SLG59M1730C Power Switch IC is an ultra-small 33mΩ, 1A pFET integrated power switch with controlled inrush current. The switch is a self-powered, high-performance, and single-channel pFET switch. This power switch operates at -40ºC to 85ºC and provides a low typical no-load supply current of 0.1µA. The low supply current and controlled VIN inrush current profile makes it ideal for personal health monitor and watch applications. This switch is available for applications of 1A with a very small 0.64mm2 WLCSP form factor.

SLG59Mxx GreenFET Load Switches

Renesas / Dialog SLG59Mxx Load Switches are optimized for high-side power rail control applications from 0.25V to 25.2V where load currents range from 1A to 9A. The SLG59Mxx load switches use a proprietary MOSFET design that combines MOSFET IP and advanced assembly techniques in ultra-small PCB footprints from 0.56mm2 to 5.04mm2. The high-performance components exhibit low thermal resistances for high current operations.