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SICW080N120Y-BP

Name: Micro Commercial Components (MCC) SICW080N120Y-BP
Brand: Micro Commercial Components (MCC)
SKU: 833-SICW080N120Y-BP
Price: 359949 IDR
Availability: InStock

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Mouser No:

833-SICW080N120Y-BP

Mfr. No:

SICW080N120Y-BP

Mfr.:

Micro Commercial Components (MCC)

Description:

SiC MOSFETs

Datasheet:

SICW080N120Y-BP Datasheet (PDF)

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Learn more about Micro Commercial Components (MCC) SICW080N120Y-BP

In Stock: 1.737

Stock:: 1.737 Can Dispatch Immediately

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Factory Lead Time:: 24 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 1737 will be subject to minimum order requirements.

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Ext. Price:

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp359.949	Rp359.949
	Rp296.104	Rp2.961.040
	Rp256.294	Rp25.629.400
	Rp255.927	Rp127.963.500
1.000	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Micro Commercial Components (MCC)
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	38 A
Rds On - Drain-Source Resistance:	85 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	3.6 V
Qg - Gate Charge:	41 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	220 W
Channel Mode:	Enhancement
Brand:	Micro Commercial Components (MCC)
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Packaging:	Bulk
Product Type:	SiC MOSFETS
Series:	SICW080N120Y
Factory Pack Quantity:	1800
Subcategory:	Transistors
Technology:	SiC

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Datasheet

SICW080N120Y-BP Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

1200V SiC N-Channel MOSFET

Micro Commercial Components (MCC) 1200V SiC N-Channel MOSFET is designed for high switching frequency and high blocking voltage with low on-resistance and avalanche capability. This MOSFET operates within a gate-source voltage of -4V to 18V and performs optimally at 18V. The 1200V n-channel MOSFET at operates on a temperature range of -55°C to 175°C and thermal resistance of 0.68°C /W junction to case. This MOSFET is halogen-free, lead-free/RoHS compliant, and includes epoxy with a flammability rating of UL 94 V-0. The applications include solar inverters, switch mode power supplies, high voltage DC/DC converters, battery chargers, and motor drivers. SICW080N120Y-BP