CGHV27030S

MACOM
941-CGHV27030S
CGHV27030S

Mfr.:

Description:
GaN FETs GaN HEMT DC-6.0GHz, 30 Watt

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about MACOM CGHV27030S

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
500
Expected 03/08/2026
Factory Lead Time:
26
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 250)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
Rp1.492.264 Rp1.492.264
Rp1.180.015 Rp11.800.150
Rp991.601 Rp99.160.100
Full Reel (Order in multiples of 250)
Rp991.601 Rp247.900.250
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
MACOM
Product Category: GaN FETs
RoHS:  
SMD/SMT
DFN-12
N-Channel
150 V
3.6 A
- 3 V
- 40 C
+ 150 C
12 W
Brand: MACOM
Configuration: Single
Gain: 21 dB
Maximum Drain Gate Voltage: 50 V
Maximum Operating Frequency: 2.7 GHz
Minimum Operating Frequency: 0 Hz
Moisture Sensitive: Yes
Output Power: 30 W
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product Type: GaN FETs
Factory Pack Quantity: 250
Subcategory: Transistors
Technology: GaN
Transistor Type: GaN HEMT
Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V
Unit Weight: 282,130 mg
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290055
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

CGHV27030S GaN HEMT

MACOM CGHV27030S 30W Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) provides wide bandwidth capabilities and high efficiency with high gain. Operating from DC to 6GHz, the module offers 21dB gain, -36dBc ACLR, and 32% efficiency at 5W PAVE. The transistor is capable of operating with either a 28V or 50V rail. MACOM CGHV27030S GaN HEMT is well-suited for telecommunications applications operating at both 28V and 50V. The device is also ideal for tactical communications applications as well as L-band and S-band radar.

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.