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STWA70N65DM6

Name: STMicroelectronics STWA70N65DM6
Brand: STMicroelectronics
SKU: 511-STWA70N65DM6
Price: 271521 IDR
Availability: InStock

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Mouser No:

511-STWA70N65DM6

Mfr. No:

STWA70N65DM6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 650 V, 36 mOhm typ., 68 A MDmesh DM6 Power MOSFET in a TO-247 long lea

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Datasheet:

STWA70N65DM6 Datasheet (PDF)

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In Stock: 596

Stock:: 596 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 596 will be subject to minimum order requirements.

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Ext. Price:

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp271.521	Rp271.521
	Rp202.723	Rp2.027.230
	Rp175.388	Rp17.538.800
	Rp155.024	Rp93.014.400

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	68 A
Rds On - Drain-Source Resistance:	40 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	4.75 V
Qg - Gate Charge:	125 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	450 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	10.8 ns
Product Type:	MOSFETs
Rise Time:	52 ns
Factory Pack Quantity:	600
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	107 ns
Typical Turn-On Delay Time:	30.4 ns
Unit Weight:	6 g

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Datasheet

STWA70N65DM6 Datasheet (PDF)

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

STWA70N65DM6 N-Channel 650V 68A Power MOSFET

STMicroelectronics STWA70N65DM6 N-Channel 650V 68A Power MOSFET is a MDmesh DM6 fast-recovery diode in a TO-247 long lead package. STMicroelectronics STWA70N65DM6 combines very low recovery charge (Q_rr), very low recovery time (t_rr), and excellent drain-source on resistance (R_DS(on)) per area with highly effective switching behavior. This device is ideal for demanding high-efficiency bridge topologies and ZVS (Zero-Voltage Switching) phase-shift converters.