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STO33N60M6

Name: STMicroelectronics STO33N60M6
Brand: STMicroelectronics
SKU: 511-STO33N60M6
Price: 40912 IDR
Availability: OutOfStock

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Mouser No:

511-STO33N60M6

Mfr. No:

STO33N60M6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET

Complete Your Design

Datasheet:

STO33N60M6 Datasheet (PDF)

ECAD Model:

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 52 Weeks Estimated factory production time.

Long lead time reported on this product.

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Minimum: 1800 Multiples: 1800

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 1800)
	Rp40.912	Rp73.641.600

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-LL-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	25 A
Rds On - Drain-Source Resistance:	125 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	4.75 V
Qg - Gate Charge:	33.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	230 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Reel
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Fall Time:	7.5 ns
Product Type:	MOSFETs
Rise Time:	33 ns
Series:	MDmesh M6
Factory Pack Quantity:	1800
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	38.5 ns
Typical Turn-On Delay Time:	19.5 ns
Unit Weight:	76 mg

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Datasheet

STO33N60M6 Datasheet (PDF)

PCN

Technical Resources

TO-LL and MDmesh M6 the latest breakthrough in high-level telecom SMPS (PDF)

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

STO65N60DM6 Power MOSFET

STMicroelectronics STO65N60DM6 Power MOSFET is part of the MDmesh DM6 fast recovery diode series combining very low recovery charge (Q_rr), recovery time (t_rr), and excellent improvement in R_DS(on). The STO65N60DM6 offers excellent switching performance via the extra driving source pin. This performance makes the STM STO65N60DM6 Power MOSFET ideal for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

STO67N60x MDmesh Power MOSFETs

STMicroelectronics STO67N60x MDmesh Power MOSFETs are Zener-protected and 100% avalanche-tested N-channel power MOSFETs suited for switching applications. These power MOSFETs feature excellent switching performance, low gate input resistance, and lower R_DS(on) per area compared to the previous generation. The STO67N60DM6 power MOSFET is a fast-recovery body diode and combines a very low recovery charge (Q_rr) and recovery time (t_rr) with the most effective switching behavior. The STMicroelectronics STO67N60M6 power MOSFET is ideal for LLC converters and boost PFC converters.

MDmesh™ M6 MOSFETs

STMicroelectronics MDmesh™ M6 MOSFETs combine a low gate charge (Q_g) with an optimised capacitance profile to target high efficiency on new topologies in power conversion applications. The super-junction MDmesh M6 series offers extremely high-efficiency performance resulting in increased power density and a low gate charge for high frequencies. The M6 series MOSFETs have a breakdown voltage ranging from 600 to 700V. They are available in a wide range of packaging options, including a TO-Leadless (TO-LL) package solution, allowing efficient thermal management. The devices include a wide range of operating voltages for industrial applications, including chargers, adapters, silver box modules, LED lighting, telecoms, servers, and solar.