RN Automotive Bias Resistor Built-in Transistors

Toshiba RN Automotive Bias Resistor Built-in Transistors (BRT) are AEC-Q101 qualified and optimized for switching, inverter circuit, interfacing, and driver circuit applications. The bias resistor is integrated, reducing the number of external parts required and decreasing system size and assembly time. The Toshiba RN Automotive Bias Resistor BRTs provide a wide resistance range to adjust to various circuit designs.

All Results (163)

Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS
Toshiba Digital Transistors AUTO AEC-Q 2-in-1 (Point-symmetrical) PNP + NPN Q1BSR=4.7kO, Q1BER=47kO, VCEO=-50V, IC=-0.1A SOT563 3.799In Stock
Min.: 1
Mult.: 1
: 4.000

Toshiba Digital Transistors AUTO AEC-Q 2-in-1 (Point-symmetrical) PNP + NPN Q1BSR=22kO, Q1BER=47kO, VCEO=-50V, IC=-0.1A (SOT563) Non-Stocked
Min.: 1
Mult.: 1
: 4.000

Toshiba Digital Transistors AUTO AEC-Q 2-in-1 (Point-symmetrical) NPN + PNP Q1BSR=47kO, Q1BER=47kO, VCEO=50V, IC=0.1A (SOT-563) 7.092In Stock
Min.: 1
Mult.: 1
: 4.000

Toshiba Digital Transistors AUTO AEC-Q 2-in-1 (Point-symmetrical) NPN + PNP Q1BSR=10kO, Q1BER=47kO, VCEO=50V, IC=0.1A (SOT-563) 743In Stock
Min.: 1
Mult.: 1
: 4.000

Toshiba Digital Transistors AUTO AEC-Q TR NPN+PNP Q1BSR=47kOhm Q1BER=22kOhm Q2BSR=47kOhm Q2BER=22kOhm VCEO=50V IC=0.1A (SOT563) 3.896In Stock
Min.: 1
Mult.: 1
: 4.000

Toshiba MOSFETs AUTO AEC-Q SS MOS P-ch Low Voltage Gate Drive VDSS:-20V Ic:-0.8A SOT-723 6.373In Stock
Min.: 1
Mult.: 1
: 8.000

Toshiba MOSFETs AUTO AEC-Q SS MOS P-ch Logic-Level Gate Drive VDSS:-40V IC:-7A PD:1.5W TSOP6F 4.707In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba MOSFETs AUTO AEC-Q SS MOS Dual N-ch Low drain-source on-resistance VDSS:100V ID:3.5A PD:1.5W TSOP6F 2.614In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Digital Transistors AUTO AEC-Q Single NPN Q1BSR=4.7kO, Q1BER=10kO, VCEO=50V, IC=0.1A (SOT-346) 13In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Digital Transistors AUTO AEC-Q NPN Q1BSR=4.7kO, Q1BER=4.7kO, VCEO=50V, IC=0.1A (SOT-723)
32.000Expected 28/08/2026
Min.: 1
Mult.: 1
: 8.000

Toshiba Digital Transistors AUTO AEC-Q Single NPN Q1BSR=4.7kO, Q1BER=47kO, VCEO=50V, IC=0.1A (SOT-416)
6.000Expected 04/11/2026
Min.: 1
Mult.: 1
: 3.000

Toshiba Digital Transistors AUTO AEC-Q Single PNP Q1BSR=4.7kO, Q1BER=4.7kO, VCEO=-50V, IC=-0.1A (SOT-416)
2.990Expected 28/08/2026
Min.: 1
Mult.: 1
: 3.000

Toshiba Digital Transistors AUTO AEC-Q PNP Q1BSR=4.7kO, Q1BER=4.7kO, VCEO=-50V, IC=-0.1A (SOT-723)
8.000Expected 16/10/2026
Min.: 1
Mult.: 1
: 8.000

Toshiba MOSFETs AUTO AEC-Q Low Rdson SS MOS N-ch Logic-Level Gate Drive VDSS:60V Ic:0.3A SOT-416 Non-Stocked Lead-Time 12 Weeks
Min.: 1
Mult.: 1
: 3.000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-363 (US6) Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1
: 3.000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q NPN + NPN Tr VCEO:50V Ic:0.15A hFE:120-400 SOT-563 (ES6) Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1
: 4.000

Toshiba Digital Transistors AUTO AEC-Q Single NPN Q1BSR=22kO, Q1BER=22kO, VCEO=50V, IC=0.1A (SOT-416) Non-Stocked
Min.: 1
Mult.: 1
: 3.000

Toshiba Digital Transistors AUTO AEC-Q NPN Q1BSR=10kO, Q1BER=47kO, VCEO=50V, IC=0.1A (SOT-723) Non-Stocked
Min.: 1
Mult.: 1
: 8.000

Toshiba Digital Transistors AUTO AEC-Q Single NPN Q1BSR=4.7kO, VCEO=50V, IC=0.1A (SOT-416) Non-Stocked
Min.: 1
Mult.: 1
: 3.000

Toshiba Digital Transistors AUTO AEC-Q NPN Q1BSR=22kO, VCEO=50V, IC=0.1A (SOT-416) Non-Stocked
Min.: 1
Mult.: 1
: 3.000

Toshiba Digital Transistors AUTO AEC-Q NPN Q1BSR=47kO, VCEO=50V, IC=0.1A (SOT-416) Non-Stocked
Min.: 1
Mult.: 1
: 3.000

Toshiba Digital Transistors AUTO AEC-Q TR NPN Q1BSR=4.7kOhm, Q1BER=10kOhm, VCEO=50V, IC=0.1A (SOT-416) Non-Stocked
Min.: 1
Mult.: 1
: 3.000

Toshiba Digital Transistors AUTO AEC-Q Single NPN Q1BSR=4.7kO, Q1BER=47kO, VCEO=50V, IC=0.1A (SOT-346) Non-Stocked Lead-Time 18 Weeks
Min.: 1
Mult.: 1
: 3.000

Toshiba Digital Transistors AUTO AEC-Q Single NPN Q1BSR=22kO, Q1BER=47kO, VCEO=50V, IC=0.1A (SOT-346) Non-Stocked Lead-Time 18 Weeks
Min.: 1
Mult.: 1
: 3.000

Toshiba Digital Transistors AUTO AEC-Q Single NPN Q1BSR=47kO, Q1BER=22kO, VCEO=50V, IC=0.1A (SOT-346) Non-Stocked Lead-Time 18 Weeks
Min.: 1
Mult.: 1
: 3.000