+65 6788-9233

Part of the TTI Family of Specialists Contact Mouser (Singapore) +65 6788-9233 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

NVXK2TR80WDT

Name: onsemi NVXK2TR80WDT
Brand: onsemi
SKU: 863-NVXK2TR80WDT
Price: 946103 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

863-NVXK2TR80WDT

Mfr. No:

NVXK2TR80WDT

Mfr.:

onsemi

Description:

MOSFET Modules APM32 SIC H-BRIDGE POWER MODULE

Lifecycle:

New At Mouser

Datasheet:

NVXK2TR80WDT Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi NVXK2TR80WDT

In Stock: 48

Stock:: 48 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp946.103	Rp946.103
	Rp778.054	Rp7.780.540
	Rp690.177	Rp82.821.240

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFET Modules
RoHS:
Technology:	SiC
Mounting Style:	Through Hole
Package/Case:	APM-32
Transistor Polarity:	N-Channel
Number of Channels:	4 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	20 A
Rds On - Drain-Source Resistance:	116 mOhms
Vgs - Gate-Source Voltage:	- 15 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	82 W
Series:	NVXK2TR80WDT
Packaging:	Tube
Brand:	onsemi
Configuration:	Dual Half-Bridge
Fall Time:	9 ns
Height:	5.8 mm
Length:	44.2 mm
Product Type:	MOSFET Modules
Rise Time:	12 ns
Factory Pack Quantity:	60
Subcategory:	Discrete and Power Modules
Tradename:	EliteSiC
Type:	Half-Bridge
Typical Turn-On Delay Time:	12 ns
Width:	29 mm

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

NVXK2TR80WDT Datasheet

Material Composition Disclosure

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

NVXK2TR80WDT Silicon Carbide (SiC) Module

onsemi NVXK2TR80WDT Silicon Carbide (SiC) Module is a 1200V, 80mΩ, and 20A dual half-bridge EliteSiC power module housed in a APM32 Dual Inline Package (DIP). This SiC module is compactly designed to have a low total module resistance. The NVXK2TR80WDT power module is automotive-qualified per AEC-Q101 and AQG324. This power module is lead-free, ROHS, and UL94V-0 compliant. The NVXK2TR80WDT EliteSiC MOSFET module is ideally used in HV DC-DC and onboard chargers in xEV applications.