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NVXK2TR80WDT

Name: onsemi NVXK2TR80WDT
Brand: onsemi
SKU: 863-NVXK2TR80WDT
Price: 902440 IDR
Availability: InStock

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Mouser No:

863-NVXK2TR80WDT

Mfr. No:

NVXK2TR80WDT

Mfr.:

onsemi

Description:

MOSFET Modules APM32 SIC H-BRIDGE POWER MODULE

Lifecycle:

New At Mouser

Datasheet:

NVXK2TR80WDT Datasheet

ECAD Model:

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In Stock: 48

Stock:: 48 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp902.440	Rp902.440
	Rp707.789	Rp7.077.890
	Rp694.946	Rp83.393.520

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFET Modules
RoHS:
Technology:	SiC
Mounting Style:	Through Hole
Package/Case:	APM-32
Transistor Polarity:	N-Channel
Number of Channels:	4 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	20 A
Rds On - Drain-Source Resistance:	116 mOhms
Vgs - Gate-Source Voltage:	- 15 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	82 W
Series:	NVXK2TR80WDT
Packaging:	Tube
Brand:	onsemi
Configuration:	Dual Half-Bridge
Fall Time:	9 ns
Height:	5.8 mm
Length:	44.2 mm
Product Type:	MOSFET Modules
Rise Time:	12 ns
Factory Pack Quantity:	60
Subcategory:	Discrete and Power Modules
Tradename:	EliteSiC
Type:	Half-Bridge
Typical Turn-On Delay Time:	12 ns
Width:	29 mm

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Datasheet

NVXK2TR80WDT Datasheet

Material Composition Disclosure

Compliance Codes

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

NVXK2TR80WDT Silicon Carbide (SiC) Module

onsemi NVXK2TR80WDT Silicon Carbide (SiC) Module is a 1200V, 80mΩ, and 20A dual half-bridge EliteSiC power module housed in a APM32 Dual Inline Package (DIP). This SiC module is compactly designed to have a low total module resistance. The NVXK2TR80WDT power module is automotive-qualified per AEC-Q101 and AQG324. This power module is lead-free, ROHS, and UL94V-0 compliant. The NVXK2TR80WDT EliteSiC MOSFET module is ideally used in HV DC-DC and onboard chargers in xEV applications.