QPD1014A GaN Input Matched Transistors

Qorvo QPD1014A GaN Input Matched Transistors are 15W (P_3dB), 50Ω input matched discrete Gallium Nitride (GaN) on Silicon Carbide (SiC) High Electron Mobility Transistor (HEMT), which operates from 30MHz to 1.2GHz on a 50V supply rail. An integrated input matching network enables wideband gain and power performance, while the output can be matched on-board to optimize for power and efficiency for any region within the band. The Qorvo QPD1014A transistors are housed in a 6mm x 5mm x 0.85mm leadless SMT package that saves real estate of already space-constrained handheld radios.