TrenchFET® Gen V Power MOSFETs with VDS

Vishay / Siliconix TrenchFET® Gen V Power MOSFETs increase power conversion efficiency with a very low RDS x Qg figure-of-merit (FOM). The Gen V Power MOSFETs have 80V, 100V, and 150V drain-source breakdown voltage options. The Gen V Power MOSFETs are available in a PowerPAK® 1212-8SH or PowerPAK SO-8 single package.

Results: 29
Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
Vishay Semiconductors MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET 1.383In Stock
3.000Expected 19/02/2026
Min.: 1
Mult.: 1
Reel: 3.000

Si SMD/SMT PowerPAK SC-70W-6 N-Channel 1 Channel 60 V 9 A - 20 V, 20 V 2 V 6 nC - 55 C + 175 C 13.6 W Enhancement Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFETs SOT669 100V 126A N-CH MOSFET 943In Stock
12.000Expected 19/02/2026
Min.: 1
Mult.: 1
Reel: 3.000

Si SMD/SMT PowerPAK-SO-8 N-Channel 1 Channel 100 V 126 A 3.6 mOhms - 20 V, 20 V 4 V 54 nC - 55 C + 150 C 104 W Enhancement TrenchFET Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFETs PPAKSO8 N-CH 30V 85.9A
21.000Expected 26/07/2027
Min.: 1
Mult.: 1
Reel: 3.000

Si SMD/SMT PowerPAK-SO-8 N-Channel 1 Channel 30 V 350.8 A 470 uOhms - 12 V, 16 V 2.2 V 120 nC - 55 C + 150 C 104.1 W Enhancement TrenchFET Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFETs PPAK1212 N-CH 30V 24.7A
11.505On Order
Min.: 1
Mult.: 1
Reel: 3.000

Si SMD/SMT PowerPAK 1212-8 N-Channel 1 Channel 30 V 67.4 A 3.25 mOhms - 12 V, 16 V 2.2 V 16.6 nC - 55 C + 150 C 26.5 W Enhancement TrenchFET Reel, Cut Tape, MouseReel