APS6408L-3OC-BA

AP Memory
878-APS6408L-3OC-BA
APS6408L-3OC-BA

Mfr.:

Description:
DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 3V, Ind. Temp., BGA24 (OctaRAM for Renesas RA6M RZ/A SoC)

ECAD Model:
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In Stock: 160

Stock:
160 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp45.498 Rp45.498
Rp42.563 Rp425.630
Rp41.279 Rp1.031.975
Rp40.361 Rp2.018.050
Rp39.444 Rp3.944.400
Rp38.160 Rp9.540.000
Rp37.609 Rp18.804.500
Rp36.692 Rp36.692.000
Rp35.408 Rp88.520.000

Product Attribute Attribute Value Select Attribute
AP Memory Technology
Product Category: DRAM
RoHS:  
PSRAM (Pseudo SRAM)
64 Mbit
8 bit
200 MHz
BGA-24
8 M x 8
2.7 V
3.6 V
- 40 C
+ 85 C
IoT RAM
Tray
Brand: AP Memory
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 4800
Subcategory: Memory & Data Storage
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Attributes selected: 0

Compliance Codes
CNHTS:
8542329010
CAHTS:
8542320020
USHTS:
8542320002
MXHTS:
8542320299
ECCN:
EAR99
Origin Classifications
Country of Origin:
Taiwan
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

APS6408L-3OC-BA DDR Octal SPI PSRAM

AP Memory APS6408L-3OC-BA Double Data Rate (DDR) Octal SPI PSRAM is designed with auto temperature-compensated self-refresh by the built-in temperature sensor and partial array self-refresh. This octal PSRAM features software reset, reset pin, and an ultra-low power half-sleep mode with data retention. The APS6408L-3OC-BA PSRAM offers a clock rate of up to 133MHz 266Mb/s read/write throughput operating within a 2.7V to 3.6V (VDD) single supply voltage range. This octal PSRAM holds 64MB in capacity and is organized in an 8M x 8-bit configuration. It utilizes a page size of 1024 bytes, and the column addresses range from AY0 to AY9, while row addresses span from AX0 to AX12.