It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

NTB004N10G

Name: onsemi NTB004N10G
Brand: onsemi
SKU: 863-NTB004N10G
Price: 119983 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

863-NTB004N10G

Mfr. No:

NTB004N10G

Mfr.:

onsemi

Description:

MOSFETs MV5 SOAFET 4.2MOHM 100V N-FET D2PAK

Datasheet:

NTB004N10G Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi NTB004N10G

In Stock: 266

Stock:: 266

Can Dispatch Immediately

An unexpected error occurred. Please try again later.
On Order:: 800

Expected 15/05/2026
Factory Lead Time:: 50

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 800)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp119.983	Rp119.983
	Rp85.492	Rp854.920
	Rp74.118	Rp7.411.800
Full Reel (Order in multiples of 800)
	Rp72.467	Rp57.973.600

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	201 A
Rds On - Drain-Source Resistance:	4.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	175 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	340 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Product Type:	MOSFETs
Series:	NTB004N10G
Factory Pack Quantity:	800
Subcategory:	Transistors
Unit Weight:	4 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

NTB004N10G Datasheet

PCN

Material Composition Disclosure

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

NTB004N10G N-Channel Power MOSFET

onsemi NTB004N10G N-Channel Power MOSFET is avalanche energy specified, 201A (I_D), 100V (V_DSS) N-channel enhancement-mode MOSFET in a D²PAK package. This MOSFET offers low 4.2mΩ @10V R_DS(on), provides rugged technology for the utmost reliability, and is hot-swap tolerant with a superior safe operating area (SOA) curve than standard MOSFETs. onsemi NTB004N10G MOSFET is designed for wide SOA applications from a 48V bus, including telecom, hot-swap, and server equipment. Other typical applications also include converters and power supplies.