S29 GL-S MIRRORBIT™ Eclipse™ Flash

Infineon Technologies S29 GL-S MIRRORBIT™ Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MIRRORBIT Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. Infineon S29 GL-S MIRRORBIT Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.

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Infineon Technologies S29GL01GS11TFB023
Infineon Technologies NOR Flash Nor
Datasheet
Non-Stocked Lead-Time 10 Weeks
Min.: 1.000
Mult.: 1.000
Reel: 1.000

S29GL01G/512/256/128S 1 Gbit 2.7 V 3.6 V 60 mA 64 M x 16 16 bit Asynchronous AEC-Q100 Reel
Infineon Technologies S29GL01GS12DHVV13
Infineon Technologies NOR Flash NOR
Datasheet
Non-Stocked Lead-Time 10 Weeks
Min.: 2.200
Mult.: 2.200
Reel: 2.200

S29GL01G/512/256/128S 1 Gbit 2.7 V 3.6 V 60 mA 64 M x 16 16 bit Asynchronous Reel