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QPD2040D

Name: Qorvo QPD2040D
Brand: Qorvo
SKU: 772-QPD2040D
Price: 186028 IDR
Availability: OutOfStock

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Mouser No:

772-QPD2040D

Mfr. No:

QPD2040D

Mfr.:

Qorvo

Description:

RF JFET Transistors 0.40 mm Pwr pHEMT

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 20 Weeks Estimated factory production time.

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Minimum: 100 Multiples: 100

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 100)
	Rp186.028	Rp18.602.800

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	RF JFET Transistors
RoHS:
Transistor Type:	pHEMT
Technology:	GaAs
Gain:	13 dB
Package/Case:	0.41 mm x 0.34 mm
Packaging:	Reel
Brand:	Qorvo
NF - Noise Figure:	1.1 dB
Product Type:	RF JFET Transistors
Series:	QPD2040D
Factory Pack Quantity:	100
Subcategory:	Transistors

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USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

QPD2040D 400um Discrete GaAs pHEMT Die

Qorvo QPD2040D 400um Discrete GaAs pHEMT Die is designed using Qorvo's proven standard 0.25um power pHEMT production process. The process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2040D operates from DC to 20GHz with 26dBm typical output power at P1dB and a gain of 13dB and 55% power-added efficiency at 1dB compression. This performance level is ideal for high-efficiency applications. The protective overcoat layer with silicon nitride provides environmental robustness and scratch protection.