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TGF3015-SM

Name: Qorvo TGF3015-SM
Brand: Qorvo
SKU: 772-TGF3015-SM
Price: 1580508 IDR
Availability: InStock

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Mouser No:

772-TGF3015-SM

Mfr. No:

TGF3015-SM

Mfr.:

Qorvo

Description:

GaN FETs .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN

Datasheet:

TGF3015-SM Datasheet (PDF)

ECAD Model:

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Learn more about Qorvo TGF3015-SM

In Stock: 91

Stock:: 91 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp1.580.508	Rp1.580.508
	Rp1.133.966	Rp28.349.150
	Rp1.027.009	Rp102.700.900

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	QFN-EP-16
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	32 V
Id - Continuous Drain Current:	557 mA
Pd - Power Dissipation:	15.3 W
Brand:	Qorvo
Configuration:	Single
Development Kit:	TGF3015-SM-EVB1
Gain:	17.1 dB
Maximum Operating Frequency:	3 GHz
Minimum Operating Frequency:	30 MHz
Moisture Sensitive:	Yes
Output Power:	11 W
Packaging:	Tray
Product Type:	GaN FETs
Series:	TGF3015
Factory Pack Quantity:	100
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	HEMT
Vgs - Gate-Source Breakdown Voltage:	- 2.7 V
Part # Aliases:	TGF3015 1120419
Unit Weight:	6,745 g

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Datasheet

TGF3015-SM Datasheet (PDF)

PCN

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CNHTS:: 8541290000
CAHTS:: 8542330000
USHTS:: 8542390090
JPHTS:: 8542330996
KRHTS:: 8532331000
MXHTS:: 8542330201
ECCN:: EAR99

TGF3015-SM GaN HEMT

TriQuint's TGF3015-SM is a 10W (P3dB), 50ohm-input matched discrete GaN on SiC HEMT which operates from 30MHz to 3.0GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in an industry-standard 3x3mm package that saves real estate of already space-constrained handheld radios.
Learn More

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.