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SIJA22DP-T1-GE3

Name: Vishay SIJA22DP-T1-GE3
Brand: Vishay / Siliconix
SKU: 78-SIJA22DP-T1-GE3
Price: 34857 IDR
Availability: OutOfStock

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Mouser No:

78-SIJA22DP-T1-GE3

Mfr. No:

SIJA22DP-T1-GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs PPAKSO8 N-CH 25V 64A

Datasheet:

SIJA22DP-T1-GE3 Datasheet

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp34.857	Rp34.857
	Rp22.566	Rp225.660
	Rp15.044	Rp1.504.400
	Rp12.072	Rp6.036.000
	Rp11.026	Rp11.026.000
Full Reel (Order in multiples of 3000)
	Rp9.760	Rp29.280.000
	Rp9.173	Rp55.038.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK SO-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	201 A
Rds On - Drain-Source Resistance:	740 uOhms
Vgs - Gate-Source Voltage:	- 16 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.2 V
Qg - Gate Charge:	83 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	48 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Fall Time:	6 ns
Forward Transconductance - Min:	155 S
Product Type:	MOSFETs
Rise Time:	6 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	TrenchFET Power MOSFET
Typical Turn-Off Delay Time:	39 ns
Typical Turn-On Delay Time:	15 ns
Unit Weight:	506,600 mg

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Datasheet

SIJA22DP-T1-GE3 Datasheet

PCN

Technical Resources

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CNHTS:: 8541290000
TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

SiJA22DP N-Channel 25V MOSFET

Vishay / Siliconix SiJA22DP N-Channel 25V MOSFET comes in a PowerPAK SO-8L package with a single configuration design and 25V_DS drain-source voltage. This module features TrenchFET® Gen IV power, tuned for the lowest R_DS to Q_oss FOM, and is 100% R_g and UIS tested. Vishay SiJA22DP N-Channel 25V MOSFET applications are synchronous rectification, high power density DC/DC, battery and load switches, and hot-swap switches.

TrenchFET® Gen IV MOSFETs

Vishay / Siliconix TrenchFET^® Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK^® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low R_DS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK^® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high-power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switches.