NSV40301MZ4T3G

onsemi
863-NSV40301MZ4T3G
NSV40301MZ4T3G

Mfr.:

Description:
Bipolar Transistors - BJT 3.0 A, 40 V Low VCE(sat) NPN Power Bipolar Junction Transistor AEC-Q101

ECAD Model:
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In Stock: 794

Stock:
794
Can Dispatch Immediately
On Order:
8.000
Expected 04/09/2026
Factory Lead Time:
25
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp19.080 Rp19.080
Rp11.925 Rp119.250
Rp7.797 Rp779.700
Rp6.017 Rp3.008.500
Rp5.449 Rp5.449.000
Rp4.972 Rp9.944.000
Full Reel (Order in multiples of 4000)
Rp4.495 Rp17.980.000
Rp3.871 Rp30.968.000

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: Bipolar Transistors - BJT
RoHS:  
REACH - SVHC:
Si
SMD/SMT
SOT-223-4
NPN
Single
5 A
40 V
40 V
6 V
2 W
215 MHz
- 55 C
+ 150 C
AEC-Q101
NSS40301MZ4
Reel
Cut Tape
Brand: onsemi
Continuous Collector Current: 3 A
DC Current Gain hFE Max: 500
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 4000
Subcategory: Transistors
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Attributes selected: 0

USHTS:
8541290055
TARIC:
8541290000
ECCN:
EAR99

NSV40301MZ4 Bipolar Power Transistor

onsemi NSV40301MZ4 Bipolar Power Transistor is a combination of low saturation voltage and high gain low VCE(sat) NPN transistor. This bipolar transistor features a 40VDC collector-emitter voltage, 1ADC base current, and -55°C to 150°C operating and storage Junction temperature range. The NSV40301MZ4 bipolar power transistor is Pb, Halogen/BFR free, and RoHS compliant. Typical applications include voltage regulation, power management for portable devices, switching regulators, motor controls, and DC-DC converters.