GANB4R8-040CBAZ

Nexperia
771-GANB4R8-040CBAZ
GANB4R8-040CBAZ

Mfr.:

Description:
GaN FETs GANB4R8-040CBA/SOT8086/WLCSP22

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
ECAD Model:
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More Information
Learn more about Nexperia GANB4R8-040CBAZ

In Stock: 4.664

Stock:
4.664 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
Rp53.203 Rp53.203
Rp34.490 Rp344.900
Rp33.757 Rp1.687.850
Rp23.850 Rp2.385.000
Rp19.814 Rp9.907.000
Full Reel (Order in multiples of 2500)
Rp19.263 Rp48.157.500
Rp16.053 Rp80.265.000
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Nexperia
Product Category: GaN FETs
RoHS:  
SMD/SMT
WLCSP-22
N-Channel
1 Channel
20 A
- 6 V, + 6 V
15.8 nC
- 40 C
+ 125 C
13 W
Enhancement
Brand: Nexperia
Configuration: Single
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product Type: GaN FETs
Factory Pack Quantity: 2500
Subcategory: Transistors
Technology: GaN
Part # Aliases: 934667630341
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Attributes selected: 0

Datasheet

PCN

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CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

GANB4R8-040CBA Bi-Directional GaN FET

Nexperia GANB4R8-040CBA Bi-Directional GaN FET is a 40V, 4.8mΩ bi-directional Gallium Nitride (GaN) High ElectronMobility-Transistor (HEMT). The GANB4R8-040CBA is a normally-off emode FET providing superior performance. The Nexperia GANB4R8-040CBA is available in a Wafer-Level Chip Scale (WLCSP) package.

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