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SBR20E100CT

Name: Diodes Incorporated SBR20E100CT
Brand: Diodes Incorporated
SKU: 621-SBR20E100CT
Price: 24217 IDR
Availability: OutOfStock

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Mouser No:

621-SBR20E100CT

Mfr. No:

SBR20E100CT

Mfr.:

Diodes Incorporated

Description:

Schottky Diodes & Rectifiers 20A SBR 100Vrrm 120Vrwm 180Ifsm

Datasheet:

SBR20E100CT Datasheet (PDF)

ECAD Model:

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Learn more about Diodes Incorporated SBR20E100CT

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 40 Weeks Estimated factory production time.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp24.217	Rp24.217
	Rp14.805	Rp148.050
	Rp9.833	Rp983.300
	Rp8.384	Rp4.192.000
	Rp7.577	Rp7.577.000
	Rp6.751	Rp16.877.500

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	Schottky Diodes & Rectifiers
RoHS:
REACH - SVHC:
Product:	Schottky Rectifiers
Mounting Style:	Through Hole
Package/Case:	TO-220AB-3
Configuration:	Dual Anode Common Cathode
Technology:	Si
If - Forward Current:	20 A
Vrrm - Repetitive Reverse Voltage:	100 V
Vf - Forward Voltage:	850 mV
Ifsm - Forward Surge Current:	250 A
Ir - Reverse Current:	100 uA
Minimum Operating Temperature:	- 65 C
Maximum Operating Temperature:	+ 175 C
Series:	SBR20E100
Packaging:	Tube
Brand:	Diodes Incorporated
Product Type:	Schottky Diodes & Rectifiers
Factory Pack Quantity:	50
Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	100 V
Unit Weight:	1,850 g

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Datasheet

SBR20E100CT Datasheet (PDF)

PCN

Product Change Notification (PDF)

Environmental Compliance (PDF)

Compliance Codes

CNHTS:: 8504409190
CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
KRHTS:: 8541109000
TARIC:: 8541100000
MXHTS:: 8541100101
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

SBR® Super Barrier Rectifiers

Diodes Inc SBR^® Super Barrier Rectifiers use a MOS manufacturing process to create a superior two-terminal device with a lower forward voltage than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes. SBR Diodes are designed for high power, low loss and fast switching applications. The presence of a MOS channel within its structure forms a low potential barrier for the majority carriers. That means SBR forward bias operation at low voltage is similar to a Schottky diode. The leakage current is lower than Schottky Diode in reverse bias due to the overlap of the P-N depletion layers and the absence of potential barrier reduction due to the image charge.

SBR20E100x Super Barrier Rectifiers

Diodes Inc. SBR20E100x Super Barrier Rectifiers deliver low forward voltage drop (VF) with excellent low reverse leakage stability at high temperatures. These rectifiers are composed of molded plastic in a TO-220AB case with matte tin finish terminals annealed over a copper lead frame. Patented SBR technology provides good avalanche capability ensuring rugged and reliable end applications. SBR20E100x rectifiers are designed to be used as rectification, freewheeling, or polarity protection diodes for DC-DC converters and AC-DC adapters/chargers. The Halogen and Antimony free green devices include a lead-free finish and ROHS compliance.