IKW20N60T

Infineon Technologies
726-IKW20N60T
IKW20N60T

Mfr.:

Description:
IGBTs LOW LOSS DuoPack 600V 20A

Datasheet:
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In Stock: 389

Stock:
389 Can Dispatch Immediately
Factory Lead Time:
36 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp124.386 Rp124.386
Rp81.456 Rp814.560
Rp59.991 Rp5.999.100
Rp53.203 Rp25.537.440
Rp47.333 Rp56.799.600

Alternative Packaging

Mfr. Part No.:
IKW20N60TFKSA1
Packaging:
Tube
Availability:
In Stock
Price:
Rp124.386
Min:
1

Similar Product

Infineon Technologies IKW20N60TFKSA1
Infineon Technologies
IGBTs LOW LOSS DuoPack 600V 20A
Compare With Current Part

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: IGBTs
RoHS:  
Si
TO-247-3
Through Hole
Single
600 V
1.5 V
- 20 V, 20 V
41 A
166 W
- 40 C
+ 175 C
Trenchstop IGBT3
Tube
Brand: Infineon Technologies
Gate-Emitter Leakage Current: 100 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 240
Subcategory: IGBTs
Tradename: TRENCHSTOP
Part # Aliases: SP000054886 IKW2N6TXK IKW20N60TFKSA1
Unit Weight: 38 g
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Attributes selected: 0

Datasheet

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Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Malaysia
Assembly Country of Origin:
China
Country of Diffusion:
Germany
The country is subject to change at the time of shipment.

300V to 1200V IGBTs

Infineon 300-1200V IGBTs have an extensive portfolio of IGBTs that achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.

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