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NVB190N65S3F

Name: onsemi NVB190N65S3F
Brand: onsemi
SKU: 863-NVB190N65S3F
Price: 96500 IDR
Availability: InStock

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Mouser No:

863-NVB190N65S3F

Mfr. No:

NVB190N65S3F

Mfr.:

onsemi

Description:

MOSFETs SUPERFET3 650V FRFET,190M

Datasheet:

NVB190N65S3F Datasheet

ECAD Model:

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Learn more about onsemi NVB190N65S3F

In Stock: 1.505

Stock:: 1.505 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 800)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp96.500	Rp96.500
	Rp64.028	Rp640.280
	Rp45.682	Rp4.568.200
	Rp40.361	Rp20.180.500
Full Reel (Order in multiples of 800)
	Rp39.260	Rp31.408.000
	Rp37.609	Rp90.261.600

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	20 A
Rds On - Drain-Source Resistance:	190 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	34 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	162 W
Channel Mode:	Enhancement
Tradename:	SuperFET III
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Single
Fall Time:	3 ns
Product Type:	MOSFETs
Rise Time:	13 ns
Series:	SuperFET3
Factory Pack Quantity:	800
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	43 ns
Typical Turn-On Delay Time:	19 ns
Unit Weight:	4 g

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Datasheet

NVB190N65S3F Datasheet

PCN

Material Composition Disclosure

Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

SuperFET® III MOSFETs

onsemi SuperFET® III MOSFETs are high voltage Super-Junction (SJ) N-Channel MOSFETs designed to meet the high power density, system efficiency, and exceptional reliability requirements of telecom, server, electric vehicle (EV) charger and solar products. These devices combine best-in-class reliability, low EMI, excellent efficiency, and superior thermal performance to make them an ideal choice for high-performance applications. Complementing their performance characteristics, the broad range of package options offered by onsemi SuperFET III MOSFETs gives product designers high flexibility, particularly with size-constrained designs.

SUPERFET III® 650V N-Channel MOSFET

onsemi SUPERFET III® 650V 190mΩ N-Channel MOSFET is ideal for various power systems for miniaturization and higher efficiency. The device utilizes charge balance technology for low on-resistance and lower gate-charge performance. The technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. SUPERFET III® 650V 190mΩ N-Channel MOSFETs are ideal for automotive onboard chargers and DC/DC converters for hybrid electric vehicles.