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SCT4062KWAHRTL

Name: ROHM Semiconductor SCT4062KWAHRTL
Brand: ROHM Semiconductor
SKU: 755-SCT4062KWAHRTL
Price: 208227 IDR
Availability: InStock

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Mouser No:

755-SCT4062KWAHRTL

Mfr. No:

SCT4062KWAHRTL

Mfr.:

ROHM Semiconductor

Description:

SiC MOSFETs TO263 1.2KV 24A N-CH SIC

Datasheet:

SCT4062KWAHRTL Datasheet

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Learn more about ROHM Semiconductor SCT4062KWAHRTL

In Stock: 1.488

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp208.227	Rp208.227
	Rp147.685	Rp1.476.850
	Rp125.487	Rp12.548.700
Full Reel (Order in multiples of 1000)
	Rp106.407	Rp106.407.000
	Rp102.921	Rp205.842.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	TO-263-7LA
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	24 A
Rds On - Drain-Source Resistance:	81 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 21 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Qg - Gate Charge:	64 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	93 W
Channel Mode:	Enhancement
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	10 ns
Forward Transconductance - Min:	6.5 S
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product:	MOSFET's
Product Type:	SiC MOSFETS
Rise Time:	11 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	22 ns
Typical Turn-On Delay Time:	4.4 ns

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Datasheet

SCT4062KWAHRTL Datasheet

Specification Sheets

Datasheet - Chinese (English language)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

SCT4062KWAHR AEC-Q101 N-Channel SiC Power MOSFET

ROHM Semiconductor SCT4062KWAHR AEC-Q101 N-Channel Silicon Carbide (SiC) Power MOSFET is a high-performance, automotive-grade device for use in demanding automotive environments. The ROHM SCT4062KWAHR features a high drain-source voltage rating of 1200V and a continuous drain current of 24A (at +25°C), making the MOSFET well-suited for high-voltage, high-efficiency power conversion systems. With a typical on-resistance of 62mΩ, the SCT4062KWAHR minimizes conduction losses and supports fast switching, which contributes to reduced power loss and improved thermal performance. Packaged in a TO-263-7LA format, the device offers excellent heat dissipation and ease of integration into compact power modules. SCT4062KWAHR is ideal for electric vehicle (EV) applications such as traction inverters, onboard chargers, and DC-DC converters, where reliability, efficiency, and thermal stability are critical.

4th Generation N-Channel SiC Power MOSFETs

ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.

AEC-Q101 SiC Power MOSFETs

ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch-mode power supplies. The SiC Power MOSFETs can boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles. Vehicle batteries are trending towards larger capacities with shorter charging times. This demands high power and efficiency on board chargers such as 11kW and 22kW. This leads to increased adoption of SiC MOSFETs. The AEC-Q101 SiC Power MOSFETs meet the needs of electronic vehicles and utilize a trench gate structure. The future design of ROHM's SiC MOSFETs endeavors to improve quality, strengthen its lineup to increase device performance, reduce power consumption, and achieve greater miniaturization.