SGT65R65AL

STMicroelectronics
511-SGT65R65AL
SGT65R65AL

Mfr.:

Description:
GaN FETs 650 V, 49 mOhm typ., 25 A, e-mode PowerGaN transistor
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Datasheet:
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Availability

Stock:
0

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Factory Lead Time:
62 Weeks Estimated factory production time.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
Rp178.507 Rp178.507
Rp123.469 Rp1.234.690
Rp100.536 Rp10.053.600
Rp99.802 Rp49.901.000
Full Reel (Order in multiples of 3000)
Rp86.593 Rp259.779.000
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: GaN FETs
RoHS:  
SMD/SMT
PowerFLAT-4
N-Channel
1 Channel
650 V
25 A
65 mOhms
+ 6 V
1.8 V
5.4 nC
- 55 C
+ 150 C
305 W
Brand: STMicroelectronics
Moisture Sensitive: Yes
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product Type: GaN FETs
Series: SGT
Factory Pack Quantity: 3000
Subcategory: Transistors
Technology: GaN-on-Si
Transistor Type: E-Mode
Type: RF Power MOSFET
Unit Weight: 76 mg
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Attributes selected: 0

Datasheet

Application Notes

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

SGT65R65AL e-mode PowerGaN Transistors

STMicroelectronics SGT65R65AL e-mode PowerGaN Transistors are 650V, 25A transistors combined with well-established packaging technology. The STMicroelectronics SGT65R65AL has a resulting G-HEMT device that provides extremely low conduction losses, high current capability, and ultra-fast switching operation. The device can enable high power density and unbeatable efficiency performances.

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