GANE3R9-150QBAZ

Name: Nexperia GANE3R9-150QBAZ
Brand: Nexperia
SKU: 771-GANE3R9-150QBAZ
Price: 206209 IDR
Availability: InStock

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Mouser No:

771-GANE3R9-150QBAZ

Mfr. No:

GANE3R9-150QBAZ

Mfr.:

Nexperia

Description:

GaN FETs GANE3R9-150QBA/SOT8091/VQFN7

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

GANE3R9-150QBAZ Datasheet (PDF)

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In Stock: 2.217

Stock:: 2.217 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp206.209	Rp206.209
	Rp141.081	Rp1.410.810
	Rp113.378	Rp5.668.900
	Rp104.389	Rp10.438.900
	Rp90.262	Rp90.262.000
Full Reel (Order in multiples of 2500)
	Rp88.061	Rp220.152.500

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	VQFN-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	3.9 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 6 V
Vgs th - Gate-Source Threshold Voltage:	2.1 V
Qg - Gate Charge:	20 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	65 W
Channel Mode:	Enhancement
Brand:	Nexperia
Configuration:	Single
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product Type:	GaN FETs
Factory Pack Quantity:	2500
Subcategory:	Transistors
Technology:	GaN
Part # Aliases:	934667633332

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Datasheet

GANE3R9-150QBAZ Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

GANE3R9-150QBA Gallium Nitride (GaN) FET

Nexperia GANE3R9-150QBA Gallium Nitride (GaN) FET is a general-purpose 150V, 3.9mΩ Gallium Nitride (GaN) FET. The GANE3R9-150QBA is a normally-off e-mode device that provides superior performance and very low on-state resistance. The Nexperia GANE3R9-150QBA is available in a Very-Thin-Profile Quad Flat No-lead package (VQFN).

GANE3R9-150QBAZ

Mfr.: Nexperia

Description: GaN FETs GANE3R9-150QBA/SOT8091/VQFN7

In Stock: 2.217

Pricing (IDR)

Specifications

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Datasheet

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GANE3R9-150QBA Gallium Nitride (GaN) FET

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Mfr.:

Nexperia

Description:

GaN FETs GANE3R9-150QBA/SOT8091/VQFN7

FEATURED PRODUCTS

NEXPERIA