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NTMFWS1D5N08XT1G

Name: onsemi NTMFWS1D5N08XT1G
Brand: onsemi
SKU: 863-NTMFWS1D5N08XT1G
Price: 73934 IDR
Availability: OutOfStock

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Mouser No:

863-NTMFWS1D5N08XT1G

Mfr. No:

NTMFWS1D5N08XT1G

Mfr.:

onsemi

Description:

MOSFETs T10S 80V SG NCH MOSFET SO8FL HE WF

Datasheet:

NTMFWS1D5N08XT1G Datasheet

ECAD Model:

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Availability

Stock:: 0

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On Order:: 4.380

Expected 05/02/2027

1.500

Expected 10/11/2027
Factory Lead Time:: 27

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1 Maximum: 280

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp73.934	Rp73.934
	Rp53.020	Rp530.200
	Rp35.591	Rp3.559.100
Full Reel (Order in multiples of 1500)
	Rp35.591	Rp53.386.500

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SO8FL-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	253 A
Rds On - Drain-Source Resistance:	1.43 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.6 V
Qg - Gate Charge:	83 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	194 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	9 ns
Forward Transconductance - Min:	176 S
Product Type:	MOSFETs
Rise Time:	9 ns
Series:	NTMFWS1D5N08X
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	43 ns
Typical Turn-On Delay Time:	24 ns

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Datasheet

NTMFWS1D5N08XT1G Datasheet

PCN

Material Composition Disclosure

Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: Japan
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Japan

The country is subject to change at the time of shipment.

PowerTrench Technology

onsemi PowerTrench Technology represents the advancement of PowerTrench technology, especially from T6 to T10, which signifies a breakthrough in power electronics. Developed by onsemi, PowerTrench MOSFETs offer enhanced efficiency and performance across various applications. The shift from T6/T8 to T10 significantly improves on-resistance and switching performance, which is crucial for energy-efficient designs.

Cloud/Data Center Power Management Solutions

Cloud and data center power infrastructure is entering an unprecedented period of growth, driven by hyperscale expansion, AI workloads, and the rapid rise of data‑intensive applications. As cloud service providers and enterprise data centers scale global footprints, efficient, reliable power delivery has become a critical enabler of performance, availability, and total cost of ownership.

NTMFWS1D5N08X Single N-Channel MOSFET

onsemi NTMFWS1D5N08X Single N-Channel MOSFET incorporates a low Q_RR and soft recovery body diode, reducing switching losses. The NTMFWS1D5N08X device offers low R_DS(on) to minimize conduction losses, ensuring efficient operation. Additionally, its low Q_G and capacitance contribute to minimizing driver losses. onsemi NTMFWS1D5N08X Single N-Channel MOSFET is lead free, halogen free, BFR free, and RoHS compliant.

Energy Storage Solutions

onsemi Energy Storage Systems (ESS) store electricity from various power sources, like coal, nuclear, wind, and solar, in different forms, including batteries (electrochemical), compressed air (mechanical), and molten salt (thermal). This solution focuses on battery energy storage systems connected to solar inverter systems.