SCTxxxAW7/SCT3xxxKW7 SiC Trench-Type 7-Pin MOSFETs

ROHM Semiconductor SCT3xxxAW7/SCT3xxxKW7 SiC Trench-Type 7-Pin MOSFETs utilize a proprietary trench gate structure to reduce ON resistance by 50% and input capacitance by 35% over planar-type SiC MOSFETs. The MOSFETs include an additional pin that separates the driver and power source pins, eliminating the inductance component's effects in reducing Vgs, ensuring faster switching speeds. The ROHM Semiconductor Trench-Type MOSFETs feature a high voltage resistance, low ON resistance, fast switching speed, simple to drive, and easy to parallel.

Results: 8
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
ROHM Semiconductor SiC MOSFETs Transistor SiC MOSFET 1200V 40m 3rd Gen TO-263-7L
Datasheet
496In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 56 A 52 mOhms - 4 V, + 22 V 5.6 V 107 nC + 175 C 267 W Enhancement
ROHM Semiconductor SiC MOSFETs Transistor SiC MOSFET 650V 60m 3rd Gen TO-263-7L
Datasheet
1.757In Stock
Min.: 1
Mult.: 1
: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 38 A 78 mOhms - 4 V, + 22 V 5.6 V 58 nC + 175 C 159 W Enhancement
ROHM Semiconductor SiC MOSFETs Transistor SiC MOSFET 1200V 160m 3rd Gen TO-263-7L
Datasheet
1.740In Stock
Min.: 1
Mult.: 1
: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 100 W Enhancement
ROHM Semiconductor SiC MOSFETs Transistor SiC MOSFET 650V 120m 3rd Gen TO-263-7L
Datasheet
2.762In Stock
Min.: 1
Mult.: 1
: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 21 A 156 mOhms - 4 V, + 22 V 5.6 V 38 nC + 175 C 100 W Enhancement
ROHM Semiconductor SiC MOSFETs TO263 650V 70A N-CH SIC
Datasheet
978In Stock
Min.: 1
Mult.: 1
: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC + 175 C 267 W Enhancement
ROHM Semiconductor SiC MOSFETs Transistor SiC MOSFET 650V 80m 3rd Gen TO-263-7L
Datasheet
855In Stock
Min.: 1
Mult.: 1
: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 29 A 104 mOhms - 4 V, + 22 V 5.6 V 48 nC + 175 C 125 W Enhancement
ROHM Semiconductor SiC MOSFETs TO263 1.2KV 30A N-CH SIC
Datasheet
369In Stock
Min.: 1
Mult.: 1
: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 30 A 104 mOhms - 4 V, + 22 V 5.6 V 60 nC + 175 C 159 W Enhancement
ROHM Semiconductor SiC MOSFETs Transistor SiC MOSFET 1200V 105m 3rd Gen TO-263-7L
Datasheet
766In Stock
Min.: 1
Mult.: 1
: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 23 A 137 mOhms - 4 V, + 22 V 5.6 V 51 nC + 175 C 125 W Enhancement